Semiconductor laser device bar cleavage epitaxial wafer adhering device and semiconductor laser device bar cleavage epitaxial wafer adhering method

Abstract

The invention relates to a semiconductor laser device bar cleavage epitaxial wafer adhering device and a semiconductor laser device bar cleavage epitaxial wafer adhering method, and belongs to the technical field of semiconductor laser device chips. The device comprises a main body, a square frame, a round cake, positioning blocks and sliding blocks, wherein the square frame is located on the upper portion of the main body, the round cake is located on the lower portion of the main body, the main body is of a square structure, sliding grooves facing the center are formed in the four corners ofthe main body respectively, the positioning blocks are fixed to the four corners of the main body, the sliding blocks are located in the sliding grooves and can slide along the sliding grooves, the middle of the round cake is connected with the main body through a pin shaft, four guide grooves with the same structure are formed in the positions, close to the edge, of the round cake and used for guiding the sliding blocks to slide in the sliding grooves respectively, the square frame is of an inside-outside telescopic structure, and one end of the sliding block abuts against the corner of thesquare frame and is used for pushing the square frame to contract. The device has an automatic expansion function, and is simple in structure, convenient to operate and check, good in chip adhering effect and high in production efficiency.

Description

technical field [0001] The invention relates to a semiconductor laser bar cleavage epitaxial wafer patching device and a patching method, belonging to the technical field of semiconductor laser chips. Background technique [0002] Due to the advantages of small size, light weight, high electro-optical conversion efficiency, long life and high reliability, semiconductor lasers (LDs) have gradually replaced the use of gas and solid-state lasers in the fields of communication, medical treatment, display, industrial production and security. Its scope of application is gradually expanding. In the production process of semiconductor lasers, it is necessary to go through multiple processes. First, the epitaxial furnace is used to grow high-quality LD epitaxial wafers, and then the LD epitaxial wafers are subjected to PECVD deposition, photolithography, electrode fabrication and other processes to make a single epitaxial wafer Capable of producing thousands of semiconductor laser c...

AI Technical Summary

Problems solved by technology

When patching, it is required that the blue film must be fully expanded and tightened on the square frame. The epitaxial film should be pasted on the blue film to be smooth. The blue film is uneven, and when the epitaxial wafer is pasted on it, the epitaxial wafer cannot fully contact with the blue film, resulting in uneven stress on the epitaxial wafer during strip cleavage, causing breakage and chipping of the cleaved strip, and even The strips produced by cleavage of the entire epitaxial wafer are unqualified

[0003] At present, the commonly used patch method is to directly paste the blue film on a fixed-size square frame by hand, and then place the epitaxial wafer in the middle of the blue film with tweezers. This method is simple to operate, but the blue film is directly pasted. On the frame, it often occurs that the expansion of the blue film is insufficient and the stretching is not tight, so that the entire blue film is not evenly pasted on the frame, and when the epitaxial wafer is pasted on the blue film, the blue film and the epitaxial wafer cannot be fully contacted, thereby affecting the epitaxial film. chip cleavage effect

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