Application of pyrogallic acid in silicon dioxide polishing

Abstract

The invention discloses an application of pyrogallic acid in silicon dioxide polishing. The pyrogallic acid is matched with a chemical mechanical polishing solution for use, wherein the chemical mechanical polishing solution comprises cerium oxide grinding particles, the concentration of the pyrogallic acid is 20-1000 ppm, and the pH value of the chemical mechanical polishing solution is 4.5. By adding pyrogallic acid into the chemical mechanical polishing solution, the polishing rate of silicon dioxide can be properly inhibited, so that butterfly defects generated on the surface of silicon dioxide in the polishing process are avoided, and the quality of a polished product is improved.

Description

technical field [0001] The invention relates to the field of chemical mechanical polishing, in particular to the use of pyrogallic acid in silicon dioxide polishing. Background technique [0002] Chemical Mechanical Polishing (CMP) consists of chemical action, mechanical action, and a combination of both. It usually consists of a grinding table with a polishing pad, and a grinding head for carrying the wafer. The grinding head holds the wafer and presses the front side of the wafer against the polishing pad. When chemical mechanical polishing is performed, the grinding head moves linearly on the polishing pad or rotates in the same direction as the grinding table. At the same time, the slurry containing abrasive particles is dripped onto the polishing pad, and spreads on the polishing pad due to centrifugal action. The wafer surface is globally planarized under the dual action of mechanical and chemical. [0003] Cerium oxide is an important abrasive for CMP polishing fl...

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However, this will increase the production cost of the polishing liquid

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