Etching depth detection method

A technology of etching depth and detection method, which is applied in semiconductor/solid-state device testing/measurement, electrical components, circuits, etc., and can solve problems such as destructive detection methods

Active Publication Date: 2020-07-17
WUXI INNOVATION CENT CO LTD
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The invention provides a detection method of etching depth, which solves the problem that the detection method in the related art is destructive

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Etching depth detection method
  • Etching depth detection method
  • Etching depth detection method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0035] It should be noted that, in the case of no conflict, the embodiments of the present invention and the features in the embodiments can be combined with each other. The present invention will be described in detail below with reference to the accompanying drawings and examples.

[0036] In order to enable those skilled in the art to better understand the solutions of the present invention, the following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only Embodiments of some, but not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts shall fall within the protection scope of the present invention.

[0037] It should be noted that the terms "f...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to the technical field of microelectronic test analysis, and specifically discloses an etching depth detection method. A sensitive module and at least two beams are arranged above a to-be-etched groove, the sensitive module comprises a thermosensitive unit, one end of each beam is connected with a frame of the to-be-etched groove, and the other end of each beam is connected with the sensitive module. Each beam comprises a wire, and the wire is connected with the thermosensitive unit. When the to-be-etched groove is etched, the etching depth detection method comprises thefollowing steps of obtaining the steady-state output voltages of the thermosensitive unit under different air pressures; obtaining a relation curve between the steady-state output voltage and the airpressure of the thermosensitive unit according to the steady-state output voltages of the thermosensitive unit under different air pressures; deriving a transition air pressure value according to therelation curve of the steady-state output voltage and the air pressure of the thermosensitive unit; and calculating the etching depth of the to-be-etched groove according to the relation model of thetransition air pressure and the etching depth and the transition air pressure value. According to the etching depth detection method provided by the invention, the etching depth can be accurately detected without damaging a device structure.

Description

technical field [0001] The invention relates to the technical field of microelectronic testing and analysis, in particular to a method for detecting etching depth. Background technique [0002] The etching process is a key process for manufacturing the suspended structure, including wet etching and dry etching. Since the etching depth will affect the performance of the device, it is necessary to detect the etching depth after the etching process is performed. At present, the commonly used etching depth detection method is to observe the profile of the etching groove by using optical microscope, optical profiler, scanning electron microscope and other equipment after splitting the etching groove. This detection method is destructive to the device. Contents of the invention [0003] The invention provides a detection method of etching depth, which solves the problem that the detection method in the related art is destructive. [0004] As an aspect of the present invention...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/66
CPCH01L22/12H01L22/20
Inventor 周琼傅剑宇侯影刘超陈大鹏
Owner WUXI INNOVATION CENT CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap