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A Repetition Frequency Nanosecond Pulse Generation Circuit Based on Drift Step Recovery Diode

A technology of recovering diodes and nanosecond pulses, applied in the direction of electric pulse generator circuit, pulse generation, electric pulse generation, etc., can solve the problems of low output pulse amplitude, high repetition frequency and high amplitude, etc. Improve pulse amplitude, low loss and stable performance

Active Publication Date: 2022-05-20
XI AN JIAOTONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the existing high-voltage narrow pulse technology based on DSRD has the problem that the output pulse amplitude is low under the condition of high repetition frequency, and the high repetition frequency and high amplitude cannot be achieved at the same time. Higher performance requirements for high values, high repetition rates, and narrow pulses

Method used

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  • A Repetition Frequency Nanosecond Pulse Generation Circuit Based on Drift Step Recovery Diode
  • A Repetition Frequency Nanosecond Pulse Generation Circuit Based on Drift Step Recovery Diode

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Embodiment Construction

[0018] The present invention is described in further detail below in conjunction with the accompanying drawings:

[0019] reference Figure 1 , the drift step recovery diode based on the heavy frequency nanosecond pulse generation circuit of the present invention comprises a charging loop, a primary pulse formation loop and a pulse formation loop, wherein the pulse formation loop comprises a saturatable pulse transformer SPT, a secondary energy storage capacitor C 2 DSRD switch assembly DSRD and resistive load R L The output of the charging circuit is connected by the input terminal of the primary pulse formation loop, the output end of the primary pulse formation loop is connected to the primary winding of the saturatable pulse transformer SPT, and one end of the secondary winding of the saturatable pulse transformer SPT is connected to the secondary energy storage capacitor C 2 One end of the connection, secondary energy storage capacitor C 2 The other end is associated with the ...

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Abstract

The invention discloses a repetitive-frequency nanosecond pulse generating circuit based on a drift step recovery diode. The output end of the charging circuit is connected with the input end of the primary pulse forming circuit, and the output end of the primary pulse forming circuit is connected to a saturable pulse transformer. The primary windings are connected, one end of the secondary winding in the saturable pulse transformer is connected to one end of the secondary energy storage capacitor, the other end of the secondary energy storage capacitor is connected to the positive pole of the DSRD switch component and one end of the resistive load, The other end of the secondary winding in the saturable pulse transformer, the negative pole of the DSRD switch component and the other end of the resistive load are all grounded. The problem of frequent work.

Description

Technical field [0001] The present invention belongs to the field of semiconductor switching and pulse power source, relates to a heavy frequency nanosecond pulse generation circuit based on a drift step recovery diode. Background [0002] High repetition rate pulse power device is an important development direction of pulse power technology, which is widely used in high power microwave, high power laser, ultra-wideband radar and other fields. For most pulsed power devices, the parameter characteristics of switching devices limit their peak power, operating repetition rate and service life. In addition, the stability and reliability of the pulse waveform output of the device is also often dependent on the performance of the switch. [0003] Traditional power switches are mostly gas devices, such as: high pressure gas spark switches, hydrogen gate flow pipes, vacuum trigger switches, etc., characterized by large power, mature design principle, wide application, but by the nature o...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H03K3/021H03K3/012H03K17/567
CPCH03K3/021H03K3/012H03K17/567Y02B70/10
Inventor 谢彦召赖雨辰王海洋
Owner XI AN JIAOTONG UNIV
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