The invention relates to the technical field of
semiconductor devices, and provides a ferroelectric
transistor and a preparation method and application thereof.The preparation method of the ferroelectric
transistor comprises the following steps that a
semiconductor layer is formed on a substrate, after patterning and
etching are completed through a photoetching technology, the
semiconductor layer is thermally oxidized at a preset temperature, the semiconductor layer is converted into a ferroelectric layer in situ, and the ferroelectric layer is formed; forming a heterostructure of the two; then photoetching and exposing source and drain
electrode patterns, depositing
metal through
electron beams or thermal
evaporation, and finishing source and drain
electrode patterning in combination with a Lift-off process; preparing a
dielectric layer on the ferroelectric layer by an
atomic layer deposition method; and finally, photoetching and exposing the pattern of the top
electrode, and completing the preparation of the top electrode through
evaporation and Lift-off processes. According to the method, an atomic-scale ultra-flat uniform interface is realized, the
adverse effect of an interface defect state and a
depolarization field on ferroelectric performance can be effectively inhibited, the device has the advantages of low working
voltage, high
fatigue resistance and high-speed response, meanwhile, the device has the advantages of low thermal budget, high process compatibility and high expandability, and the overall device is excellent in performance.