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Variable resistance memory Device

A technology of resistive memory and memory unit, which is applied in the direction of static memory, digital memory information, information storage, etc., and can solve problems such as lost data

Pending Publication Date: 2020-07-31
SAMSUNG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

A volatile memory device may lose its stored data when its power source is interrupted

Method used

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  • Variable resistance memory Device
  • Variable resistance memory Device
  • Variable resistance memory Device

Examples

Experimental program
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Embodiment Construction

[0028] figure 1 is a block diagram illustrating a variable resistance memory device according to some example embodiments of the inventive concepts. The variable resistance memory device 20 may include a memory cell array 21 , a row decoder 22 , a write driver 26 , a sense amplifier 23 and a column decoder 25 .

[0029] The memory cell array 21 may include memory cells connected to word lines WL and bit lines BL. In some example embodiments, the memory cells of each row may be connected to one of the word lines WL. The memory cells of each column may be connected to one of the bit lines BL. The memory cell array 21 may correspond to at least one of memory cell stacks described later. The memory cell array 21 may include variable resistance memory cells, eg, phase change memory cells.

[0030] The row decoder 22 may be connected to the memory cell array 21 through a sense amplifier 23 and a word line WL. Row decoder 22 may receive row address signal RA. The row decoder 22...

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Abstract

A variable resistance memory device includes memory cell stacks arranged in a first direction, the memory cell stacks including a first memory cell stack and a second memory cell stack. Each of the memory cell stacks includes a plurality of word lines, each word line of the plurality of word lines extending in a second direction intersecting the first direction and arranged in a third direction intersecting the first and second directions, and a memory cell connected to each of the plurality of word lines. Each of the memory cells includes a switching element and a variable resistance element.Each of the plurality of word lines of the first memory cell stack have a first thickness, in the first direction, of first word lines of the first memory cell stack is less than a second thickness,in the first direction, of each of the plurality of word lines of the second memory cell stack.

Description

[0001] Cross References to Related Applications [0002] This application claims priority to Korean Patent Application No. 10-2019-0008898 filed in the Korean Intellectual Property Office on Jan. 23, 2019, the disclosure of which is hereby incorporated by reference in its entirety. technical field [0003] The inventive concepts relate to semiconductor devices, and more particularly, to variable resistance memory devices. Background technique [0004] Semiconductor devices may be classified into any one of memory devices and logic devices. The memory device can store logical data. In general, semiconductor memory devices can be classified into volatile memory devices and nonvolatile memory devices. A volatile memory device may lose its stored data when its power source is interrupted. For example, volatile memory devices may include dynamic random access memory (DRAM) devices and static random access memory (SRAM) devices. In contrast, a non-volatile memory device can re...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/538H01L27/24
CPCH01L23/5386H10B63/84H10B63/10G11C5/025G11C5/063G11C8/14G11C7/18G11C13/0002G11C2213/71G11C13/0028G11C13/003G11C13/0004G11C2213/76H10B63/24H10B63/845H10B63/20H10N70/823H10N70/8413H10N70/231H10N70/066H10N70/8828H10N70/826H10N70/821H10N70/841H10N70/011
Inventor 沈揆理罗太熙
Owner SAMSUNG ELECTRONICS CO LTD