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Phase-change material nanowire assembling and testing device and method

A technology of phase change material and assembly method, applied in measurement devices, material resistance, nanotechnology, etc., can solve problems such as instability, low success rate, and disorderly arrangement of nanowires

Active Publication Date: 2020-08-04
HUAZHONG UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The preparation method of phase-change material nanowires has been related research in the prior art. At present, in the laboratory operation stage, for the electrical performance test of the above-mentioned phase-change material nanowires, the operation method at the laboratory level is to drop the nano-solution The way to the electrodes at both ends makes it randomly connected to the electrode pairs to form an electrical test loop, but the arrangement of these nanowires, nanobelts, and nanorods is often disorderly, the success rate is low, and multiple attempts are required. At the same time, this disorder Bismuth telluride brings instability to the follow-up test processing of the study of nano-electrical properties. For example, there may be complicated and messy connections in random laps, and it is difficult to accurately measure the electrical properties.

Method used

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  • Phase-change material nanowire assembling and testing device and method
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  • Phase-change material nanowire assembling and testing device and method

Examples

Experimental program
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Embodiment approach

[0044] According to an embodiment, the frequency of the applied electric field may be 1000KHz-10MHz, preferably, the frequency of the applied electric field is 500KHz-5000KHz, most preferably 100KHz-5000KHz.

[0045] In the present invention, the theoretical analysis corresponding to the above-mentioned embodiment is as follows: In order to guide the orientation of the bismuth telluride nanowires to be accurately mounted on both ends of the comb electrode, the force analysis model of the bismuth telluride nanowires is constructed above, and Re[K l ] and Re[K s ] to represent the influence of the C-M factor on the axial and radial force of bismuth telluride nanowires, as follows:

[0046] The C-M factor of the simulated bismuth telluride nanowires along the axial long axis is expressed as:

[0047]

[0048] The C-M factor of the simulated bismuth telluride nanowires along the radial minor axis is expressed as:

[0049]

[0050] in,

[0051]

[0052] ω is the angular...

Embodiment 1

[0068] This embodiment provides a bismuth telluride nanowire electrical testing and assembly method, in which the bismuth telluride nanowire is overlapped between the pair of comb-shaped electrodes, and the specific steps are as follows:

[0069] Step 1: Provide platinum-titanium comb-shaped electrode pairs (which are formed by plating a metal film with an electron beam evaporation process and then etched using a photolithography process), in which there are 10 pairs of comb-shaped electrode pairs, and the gap between the two ends of the electrode pair is The gap is 3um, and the distance between electrode pairs is 25um;

[0070] Step 2: placing the bismuth telluride nanowires prepared by the electrochemical method and the comb-shaped electrode of step 1 in the dielectric solution of ethanol to form a dielectrophoresis device;

[0071] Step 3: Apply an external electric field to the dielectrophoretic device in step 2, wherein the parameters of the external electric field are: e...

Embodiment 2～14

[0075] Using the same method as in Example 1, selecting different external electric field parameters and comb electrodes, bismuth telluride assembled nano-components with different effects can be obtained. The conditions of the electrodes used and the parameters of the applied electric field are summarized in Table 1. According to the method in Example 1, the orientation connection amount of the bismuth telluride assembled nano-components prepared in each embodiment is measured, and the results are shown in Table 2. The calculation results of the effective probability and invalid probability of the orientation connection in Examples 1, 6 and 7 are shown in Table 3. .

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Abstract

The invention relates to a phase-change material nanowire assembling and testing device and method. The method comprises the steps of applying a frequency and a voltage, under the action of a certaintime, dragging a prepared phase-change material nanowire to a position between two electrodes under the acting force of a long axis and a short axis to complete lap joint, and then applying test excitation to complete the electrical property test of the nanowire. On the basis of designing an electrical test device and method, the process of the electrical performance test is further optimized, influence factors in the whole assembling and testing process are provided, a specific scheme of rapid assembly test is provided, firstly the frequencies of the long axis and the short axis are analyzedthrough simulation, a proper frequency range is selected, and then a corresponding excitation source is selected through the influence of an external electric field and action time, so that lap jointof the single nanowire meeting test conditions is completed, and the test of the phase-change material nanowire is realized.

Description

technical field [0001] The invention belongs to the field of electrical testing of phase-change materials, in particular to an electrical testing method of bismuth telluride nanowires of phase-change materials. Background technique [0002] Nanomaterials have always been a hot topic of research at home and abroad because of their excellent properties different from bulk materials, especially in the field of phase change memory research. For unit devices at the nanometer level, it is conducive to rapid phase transition and improved integration and integration. processing speed. With the improvement of storage density, nanowires, as a phase change material with high thermal conductivity, can realize mutual conversion of thermal energy and electrical energy, and can be widely used in large-capacity rewritable optical storage media, thanks to phase change materials. Two stable states, namely amorphous and crystalline. These two states exhibit huge differences in electrical pro...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/00G01N27/04B82Y35/00
CPCG01N27/00G01N27/041B82Y35/00
Inventor 李震胡阳缪向水万祥
Owner HUAZHONG UNIV OF SCI & TECH
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