Algan-based ultraviolet LED epitaxial layer and its stripping method

An epitaxial layer and transition layer technology, applied in the field of optoelectronics, can solve problems such as the inability to effectively peel off the UV LED epitaxial layer.

Active Publication Date: 2021-08-17
金华博蓝特新材料有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The main purpose of the present invention is to provide an AlGaN-based ultraviolet LED epitaxial layer and its stripping method. The method for stripping the AlGaN-based ultraviolet LED epitaxial layer forms a plurality of nanocolumns arranged in an orderly and spaced interval on a sapphire substrate. The nano-pillars are laterally grown by selective area epitaxial growth to form an AlGaN-based ultraviolet LED epitaxial layer; due to the connection and discontinuity between adjacent nano-pillars, it is conducive to the infiltration of the corrosion solution and the expansion of the size of the holes. The epitaxial layer is etched to achieve the effect of easy peeling, so as to solve the technical problem that the traditional laser peeling cannot effectively peel off the epitaxial layer of the UV LED in the prior art

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  • Algan-based ultraviolet LED epitaxial layer and its stripping method
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  • Algan-based ultraviolet LED epitaxial layer and its stripping method

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[0035] Exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. Although exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure may be embodied in various forms and should not be limited by the embodiments set forth herein. Rather, these embodiments are provided for more thorough understanding of the present disclosure and to fully convey the scope of the present disclosure to those skilled in the art.

[0036] The invention discloses a method for peeling off the epitaxial layer of an AlGaN-based ultraviolet LED. The method comprises the following steps:

[0037] S100, ref. figure 1 , epitaxially a film layer 7 on the single-sided polished sapphire substrate 1; the material of the film layer 7 can be aluminum nitride, sapphire or aluminum gallium nitride, preferably aluminum nitride; the thickness of the film layer 7 is in the ran...

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Abstract

The invention provides an AlGaN-based ultraviolet LED epitaxial layer and a stripping method thereof. The method for stripping the AlGaN-based ultraviolet LED epitaxial layer includes the following steps: forming a plurality of nanocolumns arranged in an orderly and spaced interval on a sapphire substrate; Epitaxial growth is carried out on the nano-column to form an AlGaN-based ultraviolet LED epitaxial layer; and the AlGaN-based ultraviolet LED epitaxial layer is peeled off by selective wet etching. By forming a plurality of nanocolumns in an orderly and spaced arrangement on a sapphire substrate, and then performing lateral selective epitaxial growth on the nanocolumns, an AlGaN-based ultraviolet LED epitaxial layer is formed; due to the connectivity and discontinuity between the nanocolumns, there are It is conducive to the infiltration of the corrosion solution, expanding the size of the hole, and corroding the platform on the top of the nano-column and the epitaxial layer on the platform, thereby achieving the effect of easy peeling.

Description

technical field [0001] The invention relates to the field of optoelectronic technology, in particular to an AlGaN-based ultraviolet LED epitaxial layer and a stripping method thereof. Background technique [0002] At present, there are two types of substrate materials used in AlGaN-based ultraviolet LEDs: one is sapphire substrates commonly used in blue LEDs; the other is silicon carbide substrates represented by Cree Corporation of the United States. Sapphire substrates are favored by UV LED developers because they are very cheap, easy to obtain, and are widely used in blue LEDs. [0003] For traditional full-mounted blue LEDs, the top ITO and P-pole GaN will affect the light output effect of the chip, so the flip chip was developed. Similarly, for UV LEDs, the flip-chip method is the most adopted for this reason. However, when the UV LED is flip-chip, the refractive index of the sapphire substrate will still affect the light extraction efficiency. Therefore, the sapphir...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00H01L33/20B82Y40/00
CPCB82Y40/00H01L33/007H01L33/20
Inventor 徐良蓝文安刘建哲余雅俊夏建白李京波郭炜叶继春
Owner 金华博蓝特新材料有限公司
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