Semiconductor device and forming method thereof
A semiconductor and pattern technology, applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, transistors, etc., can solve problems such as the inability to meet the resolution requirements or production process requirements for manufacturing micro-linewidth patterns
Inactive Publication Date: 2020-09-08
FUJIAN JINHUA INTEGRATED CIRCUIT CO LTD
View PDF3 Cites 2 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
[0003] With the complexity of integrated circuits, the size of these tiny patterns is continuously reduced and the structure is constantly changing. Therefore, the equipment used to generate feature patterns must meet the strict requirements of manufacturing process resolution and overlay accuracy. , the single patterning method can no longer meet the resolution requirements or manufacturing process requirements for manufacturing micro-linewidth patterns
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0021] In order to enable those of ordinary skill in the technical field of the present invention to understand the present invention further, several preferred embodiments of the present invention are listed below, together with the accompanying drawings, to explain in detail the content of the present invention and what it intends to achieve. The effect of.
[0022] Please refer to Figure 1 to Figure 10 , The drawing is a schematic diagram of a method for forming a semiconductor device in a preferred embodiment of the present invention, where: figure 1 , figure 2 , Figure 4 , Image 6 , Figure 8 and Picture 10 Is a schematic top view of a semiconductor device in the manufacturing process, image 3 , Figure 5 , Figure 7 and Picture 9 Respectively figure 2 , Figure 4 , Image 6 and Figure 8 A schematic cross-sectional view along the tangent line A-A' in the middle.
[0023] First, please refer to Figure 1 to Figure 3 As shown, a substrate 100 is provided. The substrate ...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
The invention discloses a semiconductor device and a forming method thereof. The semiconductor device includes a substrate, a plurality of first patterns, and a plurality of second patterns. The plurality of first patterns and the plurality of second patterns are arranged on the substrate, and the first patterns and the second patterns are parallel to each other and are alternately arranged alongthe first direction. The first patterns and the second patterns are respectively provided with first sides and second sides which are opposite to each other, the first side of each first pattern is provided with a first protruding part, the second side of each second pattern is provided with a second protruding part, and the area of each first protruding part is different from that of each secondprotruding part. The specific patterns in the semiconductor device are relatively dense in layout and relatively small in size, so that the semiconductor device can be matched with the manufacturing process of subsequent components, and sufficient manufacturing space is provided.
Description
Technical field [0001] The present invention relates to a semiconductor device and a forming method thereof, in particular to a semiconductor device formed by multiple patterning processes and a forming method thereof. Background technique [0002] In the semiconductor manufacturing process, the manufacture of some microstructures requires the use of photolithography and etching in a suitable substrate or material layer such as a semiconductor substrate / film layer, a dielectric material layer or a metal material layer. Tiny patterns with precise dimensions. To achieve this goal, in traditional semiconductor technology, a mask layer is formed on the target material layer, so that these tiny patterns are formed / defined in the mask layer, and then the patterns are transferred to Target film. Generally speaking, the mask layer is, for example, a patterned photoresist layer formed by a photolithography process, and / or a patterned mask layer formed by using the patterned photoresist ...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/108H01L21/8242H10B12/00
CPCH10B12/30H10B12/482
Inventor 冯立伟
Owner FUJIAN JINHUA INTEGRATED CIRCUIT CO LTD