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A Novel Lateral pn Junction Photodetector

A photodetector and pn junction technology, applied in the field of photodetectors, can solve problems such as insufficient bandwidth utilization, unfavorable operating performance of components, and insufficient photodetector responsivity, so as to improve bandwidth, stability and accuracy , the effect of improving operating efficiency

Active Publication Date: 2022-03-15
SANMING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] Existing photodetectors generally have insufficient responsivity and insufficient bandwidth utilization, which limits the efficient operation of the entire system and is very unfavorable for improving the operating efficiency of components.

Method used

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  • A Novel Lateral pn Junction Photodetector
  • A Novel Lateral pn Junction Photodetector
  • A Novel Lateral pn Junction Photodetector

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Experimental program
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Embodiment

[0031] Please refer to Figure 1~2 , the present embodiment provides a novel lateral pn junction photodetector 1000, the ratio of the conduction length of the p-type slab region 100 to the n-type slab region 200 of the novel lateral pn junction photodetector 1000 is 1:2.7900-2.8400 , as shown in the figure, that is, the ratio of the conduction length a of the p-type slab region 100 to the conduction length b of the n-type slab region 200 is 1:2.7900˜2.8400.

[0032] The inventors of the present application found that the main carriers of the p-type slab region 100 are holes, and the main carriers of the n-type slab region 200 are electrons, and electrons and holes have different mobility rates. Taking silicon as an example, the mobility of electrons is about 1350cm2 / (vs), while the mobility of holes is about 480cm2 / (vs). Combined with material homogeneity and average mobility, under a comprehensive evaluation, the mobility of electrons The actual motion migration rate is abou...

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Abstract

A new type of side -to -PN optoelectronic detector involves the field of photoelectric detectors.The P -type SLAB area and N -type SLAB region of the new side -to -PN optoelectronics detector are 1: 2.7900 ~ 2.8400.Its structure is simple, can effectively improve the response during the operation, improve the operating bandwidth, and can also improve the stability and accuracy of the operation process, which is of positive significance for improving the overall operational efficiency and operating efficiency of the system.

Description

technical field [0001] The invention relates to the field of photodetectors, in particular to a novel lateral pn junction photodetector. Background technique [0002] Existing photodetectors generally have the problems of insufficient responsivity and insufficient bandwidth utilization, which limits the efficient operation of the entire system and is very unfavorable for improving the operating efficiency of components. [0003] In view of this, this application is proposed. Contents of the invention [0004] The purpose of the present invention is to provide a new type of lateral pn junction photodetector, which has a simple structure, can effectively improve the responsivity in the operation process, increase the operation bandwidth, and can also improve the stability and accuracy in the operation process. It is of positive significance to improve the overall operating efficiency and performance of the system. [0005] Embodiments of the present invention are achieved ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0352H01L31/103
CPCH01L31/035272H01L31/103
Inventor 崔积适王娟崔文静陈洪敏
Owner SANMING UNIV