A terahertz narrow-band absorber with an open square ring structure and its manufacturing method
A technology of terahertz narrowband and manufacturing method, which is applied in the field of terahertz narrowband absorber and its manufacture, can solve the problems of not being able to realize high absorption rate and high quality factor and sensitivity at the same time, and achieve simple structure, easy integration and high quality factor Effect
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Embodiment 1
[0046] The invention provides a terahertz narrow-band absorber with an open square ring structure, which includes a pattern layer, an intermediate dielectric layer and a reflection layer arranged sequentially from top to bottom, and the pattern layer is composed of N×N open square ring structural units arranged periodically, The pattern layer is closely attached to the surface of the medium layer, and the reflective layer is connected to the bottom surface of the medium layer;
[0047] The open square ring structural unit is composed of an outer square ring and an inner square ring, with the center of the inner square ring as the center of rotation, and four 90° rotationally symmetrical openings are arranged on the inner metal square ring; four 90° The rotationally symmetrical openings are respectively arranged at the midpoints of the four sides of the inner metal square ring; the opening width is 8 μm to 12 μm.
[0048] In the open square ring structural unit:
[0049] The o...
Embodiment 2
[0064] The terahertz narrowband absorber with the open square ring structure designed in this embodiment has a structure such as figure 1 and figure 2 As shown, from top to bottom are the pattern layer 1, the dielectric layer 2, and the reflective layer 3.
[0065] The metal pattern layer is formed by periodic arrangement of open square ring structural units, the period P=160.0 μm, the open square ring structural unit is composed of an outer metal square ring and an inner metal open ring, and the metal pattern layer is closely attached to the surface of the intermediate dielectric layer 2 , similar to a sandwich structure, such as Figure 4 shown.
[0066] The intermediate dielectric layer is made of silicon dioxide and has a thickness of 60.0 μm.
[0067] The metal reflective layer is made of gold and has a thickness of 0.2 μm.
[0068] The material of the metal pattern layer is gold with a thickness of 0.2 μm, such as figure 2 As shown, the specific dimensions are: th...
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