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Method and device for controlling local temperature gradient of large-mass crystal growth

A technology of crystal growth and local temperature, applied in crystal growth, single crystal growth, single crystal growth, etc., can solve the problems of large diameter crystals that are difficult to grow and low production efficiency

Active Publication Date: 2020-10-27
SHANXI CHINA CRYSTAL TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

It is difficult to grow large-diameter crystals, the length is only about 100mm, and the production efficiency is low

Method used

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  • Method and device for controlling local temperature gradient of large-mass crystal growth
  • Method and device for controlling local temperature gradient of large-mass crystal growth
  • Method and device for controlling local temperature gradient of large-mass crystal growth

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Effect test

Embodiment 1

[0051] Such as figure 1 As shown, the present invention discloses a method for controlling the local temperature gradient of large-mass crystal growth, comprising the following steps:

[0052] Step 1: Complete the installation of the crystal growth furnace according to the single crystal operation process, and then carry out the treatment of raising the temperature, adjusting the temperature, and melting the seed;

[0053]Step 2: each temperature zone of the crystal growth furnace after melting seed in step 1 is adjusted temperature, each temperature zone of crystal growth furnace comprises the first temperature zone, the second temperature zone, the 3rd temperature zone, the 4th temperature zone, The fifth temperature zone and the sixth temperature zone are adjusted by reducing the temperature of the first temperature zone and the second temperature zone, and the temperature of the third temperature zone, the fourth temperature zone, the fifth temperature zone and the sixth t...

Embodiment 2

[0071] Such as figure 1 As shown, the present invention discloses a method for controlling the local temperature gradient of large-mass crystal growth, comprising the following steps:

[0072] Step 1: Complete the installation of the crystal growth furnace according to the single crystal operation process, and then carry out the treatment of raising the temperature, adjusting the temperature, and melting the seed;

[0073] Step 2: each temperature zone of the crystal growth furnace after melting seed in step 1 is adjusted temperature, each temperature zone of crystal growth furnace comprises the first temperature zone, the second temperature zone, the 3rd temperature zone, the 4th temperature zone, The fifth temperature zone and the sixth temperature zone are adjusted by reducing the temperature of the first temperature zone and the second temperature zone, and the temperature of the third temperature zone, the fourth temperature zone, the fifth temperature zone and the sixth ...

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Abstract

The invention discloses a method for controlling the local temperature gradient of large-mass crystal growth. The method is characterized by comprising the following steps: step 1, installing a crystal growth furnace, and carrying out heating melting, temperature adjustment and seed melting treatment; step 2, adjusting the temperature of each temperature zone of the crystal growth furnace after seed melting in the step 1, and gradually reducing the shoulder temperature to complete the shouldering process of the crystal; step 3, keeping a support tube and a quartz tube of the crystal growth furnace still, and moving a transmission device of the crystal growth furnace upwards to drive a furnace body to move so that a crystal growth interface moves upwards, and the growth of the crystal is realized; step 4, gradually descending the furnace core of the crystal growth furnace while moving the furnace body so that the furnace core of the crystal growth furnace moves relative to the supporting pipe; or adjusting the fluid material and the fluid speed in the heat dissipation channel, changing the heat taken away by the heat dissipation channel and controlling the temperature gradient. Targeted adjustment of the temperature gradient in the crystal growth process is achieved by adjusting the heat preservation material and the relative position in the growth process.

Description

technical field [0001] The invention relates to the technical field of semiconductor material preparation, in particular to a method and device for controlling the local temperature gradient of large-mass crystal growth. Background technique [0002] Gallium arsenide (GaAs) material is the most important material in the second generation of new compound semiconductors after silicon single crystal. It has excellent performance, high electron mobility and photoelectric conversion efficiency, and is widely used in the fields of microelectronics and optoelectronics, especially in the process of 5G commercialization, and will play an irreplaceable role. Semi-insulating high-resistance GaAs (ρ>108Ω-cm) polished wafers and epitaxial wafer substrates are the main substrate materials for RF PA devices. The main parameters of semi-insulating high-resistance gallium arsenide (GaAs) are resistivity and mobility, and the carbon concentration in the crystal has a great influence on re...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/42C30B11/00
CPCC30B29/42C30B11/006
Inventor 高佑君柴晓磊樊海强
Owner SHANXI CHINA CRYSTAL TECH CO LTD