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Method and device for controlling local temperature gradient of large-mass crystal growth

A technology of crystal growth and local temperature, applied in crystal growth, single crystal growth, single crystal growth, etc., can solve the problems of large diameter crystals that are difficult to grow and low production efficiency

Active Publication Date: 2022-04-26
SHANXI CHINA CRYSTAL TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

It is difficult to grow large-diameter crystals, the length is only about 100mm, and the production efficiency is low

Method used

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  • Method and device for controlling local temperature gradient of large-mass crystal growth
  • Method and device for controlling local temperature gradient of large-mass crystal growth
  • Method and device for controlling local temperature gradient of large-mass crystal growth

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Effect test

Embodiment 1

[0051] Such as figure 1 As shown, the present invention discloses a method for controlling the local temperature gradient of large-mass crystal growth, comprising the following steps:

[0052] Step 1: Complete the installation of the crystal growth furnace according to the single crystal operation process, and then carry out the treatment of raising the temperature, adjusting the temperature, and melting the seed;

[0053]Step 2: each temperature zone of the crystal growth furnace after melting seed in step 1 is adjusted temperature, each temperature zone of crystal growth furnace comprises the first temperature zone, the second temperature zone, the 3rd temperature zone, the 4th temperature zone, The fifth temperature zone and the sixth temperature zone are adjusted by reducing the temperature of the first temperature zone and the second temperature zone, and the temperature of the third temperature zone, the fourth temperature zone, the fifth temperature zone and the sixth t...

Embodiment 2

[0071] Such as figure 1 As shown, the present invention discloses a method for controlling the local temperature gradient of large-mass crystal growth, comprising the following steps:

[0072] Step 1: Complete the installation of the crystal growth furnace according to the single crystal operation process, and then carry out the treatment of raising the temperature, adjusting the temperature, and melting the seed;

[0073] Step 2: each temperature zone of the crystal growth furnace after melting seed in step 1 is adjusted temperature, each temperature zone of crystal growth furnace comprises the first temperature zone, the second temperature zone, the 3rd temperature zone, the 4th temperature zone, The fifth temperature zone and the sixth temperature zone are adjusted by reducing the temperature of the first temperature zone and the second temperature zone, and the temperature of the third temperature zone, the fourth temperature zone, the fifth temperature zone and the sixth ...

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Abstract

The invention discloses a method for controlling the local temperature gradient of large-mass crystal growth, which is characterized in that it comprises the following steps: Step 1: installing a crystal growth furnace, and performing temperature-raising, temperature-adjusting, and seed-melting treatments; Step 2: placing the Each temperature zone of the crystal growth furnace after melting in step 1 adjusts the temperature, gradually reduces the shoulder temperature, and completes the shouldering process of the crystal; Step 3: the support tube and the quartz tube of the crystal growth furnace are kept still, and the crystal growth The transmission device of the furnace moves up to drive the furnace body to move, so that the crystal growth interface moves up to realize the crystal growth; step 4: the furnace body moves and gradually lowers the furnace core of the crystal growth furnace, so that the furnace core of the crystal growth furnace is opposite to the support tube Move; or adjust the fluid material and fluid velocity in the heat dissipation channel, change the heat taken away through the heat dissipation channel, and control the temperature gradient. The targeted adjustment of the temperature gradient during the crystal growth process is realized by adjusting the insulation material and its relative position during the growth process.

Description

technical field [0001] The invention relates to the technical field of semiconductor material preparation, in particular to a method and device for controlling the local temperature gradient of large-mass crystal growth. Background technique [0002] Gallium arsenide (GaAs) material is the most important material in the second generation of new compound semiconductors after silicon single crystal. It has excellent performance, high electron mobility and photoelectric conversion efficiency, and is widely used in the fields of microelectronics and optoelectronics, especially in the process of 5G commercialization, and will play an irreplaceable role. Semi-insulating high-resistance GaAs (ρ>108Ω-cm) polished wafers and epitaxial wafer substrates are the main substrate materials for RF PA devices. The main parameters of semi-insulating high-resistance gallium arsenide (GaAs) are resistivity and mobility, and the carbon concentration in the crystal has a great influence on re...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/42C30B11/00
CPCC30B29/42C30B11/006
Inventor 高佑君柴晓磊樊海强
Owner SHANXI CHINA CRYSTAL TECH CO LTD