NOR-type memory device and method of fabricating the same
A technology of memory element and memory unit, which is applied in semiconductor/solid-state device manufacturing, static memory, digital memory information, etc.
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[0128] see image 3 , image 3 It is an equivalent circuit diagram of a NOR type memory element 2 according to a preferred embodiment of the present invention. In more detail, image 3 An equivalent circuit diagram of a NOR type memory element 2 with a vertical channel structure.
[0129] Such as image 3As shown, the memory cell array in the NOR memory device 2 according to the present invention includes a plurality of memory cell strings 20 along the lateral direction T. As shown in FIG. Each memory cell string 20 is composed of a plurality of memory cell blocks 202 connected in parallel to a corresponding bit line (BL0 to BLm−1) among the plurality of bit lines (BL0 to BLm−1). Each memory cell string 20 includes a corresponding bit line (BL0 to BLm−1) among the plurality of bit lines (BL0 to BLm−1) and a plurality of memory cells (Q0 to Qn−1). Each memory cell block 202 is composed of one memory cell (Q0 to Qn−1) among the plurality of memory cells (Q0 to Qn−1). Each ...
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