Epitaxial structure and manufacturing method thereof

Abstract

The application discloses an epitaxial structure and its manufacturing method, which is located on the first carrier supply layer on the substrate; the control structure is located on the first carrier supply layer, including multiple quantum well layers; multiple V-shaped depressions , extending from the surface of the regulating structure into the regulating structure; and a second carrier supply layer located on the regulating structure, wherein at least two V-shaped depressions are different. The epitaxial structure of the present invention controls the extension depth of each V-shaped depression in the control structure through the regulating structure, which not only improves the uniformity of the distribution of the V-shaped depressions in the longitudinal direction of the epitaxial structure, disperses the stress, but also increases the mechanical strength of the epitaxial structure. The uniformity of intensity, thereby improving the internal quantum efficiency of the light-emitting element.

Description

technical field [0001] The present disclosure relates to the field of epitaxial structure manufacturing, and more particularly, to an epitaxial structure and a manufacturing method thereof. Background technique [0002] Compound semiconductor light-emitting elements have become the mainstream lighting source in the market because of their advantages such as energy saving and environmental protection, high luminous efficiency, easy control of color wavelength, small size, and long service life. They are widely used in home lighting, outdoor street lighting, stage lighting, transportation, etc. Various lighting and display fields such as signal lights, TV backlights, mobile phone computer backlights, indoor display screens, and car lights. [0003] In the prior art, nitride semiconductor light-emitting elements have relatively high luminous efficiency, and thus have been more and more widely used in the lighting field. [0004] However, nitride semiconductor light-emitting el...

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Problems solved by technology

[0004] However, nitride semiconductor light-emitting elements generally use heteroepitaxy, and the lattice mismatch leads to a large number of dislocations in the light-emitting element, and the dislocation density is as high as 10 8 to 10 10 cm -2 , which reduces the growth quality of the epitaxial layer, thereby reducing the internal quantum efficiency of the light-emitting element

In addition, since V-shaped pits (V-pits) are easily generated during the epitaxial growth process, the opening position, distribution uniformity, and opening size of the V-shaped pits will all affect the internal quantum efficiency of the light-emitting element, and in the prior art , the opening position, distribution uniformity and opening size of the V-shaped depression are not easy to control

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