Epitaxial structure and manufacturing method thereof

An epitaxial structure and control structure technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problem that the opening position, distribution uniformity and opening size are not easy to control, affect the internal quantum efficiency of light-emitting elements, and reduce the internal quantum efficiency of light-emitting elements. and other problems, to achieve the effect of improving internal quantum efficiency, reducing dislocations, and increasing uniformity
CN111933761BActive Publication Date: 2022-04-26XIAMEN SILAN ADVANCED COMPOUND SEMICON CO LTD
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Patent Information

Authority / Receiving Office
CN ยท China
Patent Type
Patents(China)
Current Assignee / Owner
XIAMEN SILAN ADVANCED COMPOUND SEMICON CO LTD
Publication Date
2022-04-26

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Abstract

The application discloses an epitaxial structure and its manufacturing method, which is located on the first carrier supply layer on the substrate; the control structure is located on the first carrier supply layer, including multiple quantum well layers; multiple V-shaped depressions , extending from the surface of the regulating structure into the regulating structure; and a second carrier supply layer located on the regulating structure, wherein at least two V-shaped depressions are different. The epitaxial structure of the present invention controls the extension depth of each V-shaped depression in the control structure through the regulating structure, which not only improves the uniformity of the distribution of the V-shaped depressions in the longitudinal direction of the epitaxial structure, disperses the stress, but also increases the mechanical strength of the epitaxial structure. The uniformity of intensity, thereby improving the internal quantum efficiency of the light-emitting element.
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Description

technical field

[0001] The present disclosure relates to the field of epitaxial structure manufacturing, and more particularly, to an epitaxial structure and a manufacturing method thereof. Background technique

[0002] Compound semiconductor light-emitting elements have become the mainstream lighting source in the market because of their advantages such as energy saving and environmental protection, high luminous efficiency, easy control of color wavelength, small size, and long service life. They are widely used in home lighting, outdoor street lighting, stage lighting, transportation, etc. Various lighting and display fields such as signal lights, TV backlights, mobile phone computer backlights, indoor display screens, and car lights.

[0003] In the prior art, nitride semiconductor light-emitting elements have relatively high luminous efficiency, and thus have been more and more widely used in the lighting field.

[0004] However, nitride semiconductor light-emitting el...

Claims

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