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Method for quickly preparing easy-to-cut high-performance Bi2Te3-based thermoelectric material

A thermoelectric material, high-performance technology, applied in the energy field, can solve problems such as inconsistency of cutting process, achieve the effect of improving utilization rate, post-processing efficiency, and improving mechanical properties

Active Publication Date: 2020-11-27
武汉新赛尔科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The technical effect that this new technology provides is improved thermal conductivity while maintaining its orientation during manufacturing processes like solidification or crystal growth. This results from direct fusion between molten metal and spun polymer fibers without any other steps involved beforehand.

Problems solved by technology

This patented technical problem addressed in this patents relates to improving the efficiency and quality of producing electronic devices from ceramics called ferroelectrics. Ferroelectronics offer unique advantages over existing technologies like semiconductors but they also pose challenges related to their manufacturing methodology. Current techniques involve expensive equipment and complicated procedures involving multiple steps, leading to waste product formation. Therefore there remains a challenge towards developing better performing ferritocalctrode composites suitable for use in electronically commutated fuel cells.

Method used

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  • Method for quickly preparing easy-to-cut high-performance Bi2Te3-based thermoelectric material
  • Method for quickly preparing easy-to-cut high-performance Bi2Te3-based thermoelectric material
  • Method for quickly preparing easy-to-cut high-performance Bi2Te3-based thermoelectric material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] A rapid preparation of high-performance p-type Bi that is easy to cut 2 Te 3 A method based on thermoelectric materials, comprising the steps of:

[0026] (1) Using high-purity elemental Bi, Sb, and Te as initial raw materials, according to the chemical composition Bi 0.5 Sb 1.5 Te 3 The stoichiometric ratio of each element in the element is weighed, and after weighing, it is vacuum-sealed in a quartz tube, and the quartz tube is placed in a melting furnace to melt to obtain p-type Bi 2 Te 3 Base ingot body; wherein, the melting temperature is 1123K, and the melting time is 10h;

[0027] (2) the resulting p-type Bi 2 Te 3 The base ingot is subjected to low-speed melt spinning to obtain thin strips; wherein, the melt spinning speed is 4m / s, an argon atmosphere is used, and the injection diameter is 0.35mm;

[0028] (3) Lay the thin strip obtained above in a mold for spark plasma activation sintering (SPS) to obtain a high-performance p-type Bi that is easy to cut...

Embodiment 2

[0036] The difference between this embodiment and the embodiment 1 lies in that the SPS sintering pressure is 24 MPa, the sintering temperature is 450° C., and the temperature is kept for 5 minutes.

[0037] For the p-type Bi prepared in embodiment 2 2 Te 3 The performance test of the base thermoelectric material is carried out, and the performance test direction is parallel to the pressure direction. The electrical conductivity, Seebeck coefficient and power factor in the range of 300K-400K are shown in Table 3.

[0038] table 3

[0039] 300K 350K 400K Conductivity (10 4 S / m)

Embodiment 3

[0041] The difference between this example and Example 1 lies in that the SPS sintering pressure is 40 MPa, the sintering temperature is 450° C., and the temperature is kept for 5 minutes.

[0042] For the p-type Bi prepared in embodiment 3 2 Te 3 The performance test of the base thermoelectric material is carried out in a direction parallel to the pressure direction. The electrical conductivity, Seebeck coefficient and power factor in the range of 300K-400K are shown in Table 4.

[0043] Table 4

[0044] 300K 350K 400K Conductivity (10 4 S / m)

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Abstract

The invention discloses a method for quickly preparing an easy-to-cut high-performance p-type or n-type Bi2Te3-based thermoelectric material. The method comprises the following steps: by using a high-purity simple substance as an initial raw material, melting to obtain a p-type or n-type Bi2Te3-based ingot body; and then performing low-speed melt spinning, flatly laying the obtained sheet in a mold for spark plasma activated sintering, and obtaining the high-performance p-type or n-type Bi2Te3-based thermoelectric material easy to cut. According to the invention, the oriented thin strip is obtained by directly sintering the melt and spinning. Therefore, the thermoelectric material block body obtained by final sintering partially retains the orientation of the thin strip. The thermoelectricmaterial with the optimal performance direction consistent with that of a zone-melting sample is obtained while the mechanical property is improved, a mature zone-melting material cutting and follow-up treatment process at present can be directly used, and compared with a conventional polycrystalline material, the utilization rate and the post-treatment efficiency of the material are remarkably improved.

Description

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Claims

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Application Information

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Owner 武汉新赛尔科技有限公司