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A fast-prepared and easy-to-cut high-performance bi 2 te 3 Approaches based on thermoelectric materials

A thermoelectric material and high-performance technology, applied in the energy field, can solve problems such as inconsistent cutting processes, achieve the effect of improving utilization rate and post-processing efficiency, and improving mechanical properties

Active Publication Date: 2021-09-07
武汉新赛尔科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The current research on melt spinning is mainly to grind thin strips and then SPS sintering to obtain dense bulk materials, which is the same as the previously mentioned high-energy ball milling and other nano-structure methods, and the optimal performance direction of the final thermoelectric materials is still in the direction of Perpendicular to the direction of sintering pressure, which is inconsistent with the current mature zone melting material cutting process

Method used

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  • A fast-prepared and easy-to-cut high-performance bi <sub>2</sub> te <sub>3</sub> Approaches based on thermoelectric materials
  • A fast-prepared and easy-to-cut high-performance bi <sub>2</sub> te <sub>3</sub> Approaches based on thermoelectric materials
  • A fast-prepared and easy-to-cut high-performance bi <sub>2</sub> te <sub>3</sub> Approaches based on thermoelectric materials

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] A rapid preparation of high-performance p-type Bi that is easy to cut 2 Te 3 A method based on thermoelectric materials, comprising the steps of:

[0026] (1) Using high-purity elemental Bi, Sb, and Te as initial raw materials, according to the chemical composition Bi 0.5 Sb 1.5 Te 3 The stoichiometric ratio of each element in the element is weighed, and after weighing, it is vacuum-sealed in a quartz tube, and the quartz tube is placed in a melting furnace to melt to obtain p-type Bi 2 Te 3 Base ingot body; wherein, the melting temperature is 1123K, and the melting time is 10h;

[0027] (2) the resulting p-type Bi 2 Te 3 The base ingot is subjected to low-speed melt spinning to obtain a thin strip; wherein, the melt spinning speed is 4m / s, an argon atmosphere is used, and the injection diameter is 0.35mm;

[0028] (3) Lay the thin strip obtained above in a mold for spark plasma activation sintering (SPS) to obtain a high-performance p-type Bi that is easy to cu...

Embodiment 2

[0036] The difference between this embodiment and the embodiment 1 lies in that the SPS sintering pressure is 24 MPa, the sintering temperature is 450° C., and the temperature is kept for 5 minutes.

[0037] For the p-type Bi prepared in embodiment 2 2 Te 3 The performance test of the base thermoelectric material is carried out, and the performance test direction is parallel to the pressure direction. The electrical conductivity, Seebeck coefficient and power factor in the range of 300K-400K are shown in Table 3.

[0038] table 3

[0039] 300K 350K 400K Conductivity (10 4 S / m)

Embodiment 3

[0041] The difference between this example and Example 1 lies in that the SPS sintering pressure is 40 MPa, the sintering temperature is 450° C., and the temperature is kept for 5 minutes.

[0042] For the p-type Bi prepared in embodiment 3 2 Te 3 The performance test of the base thermoelectric material is carried out in a direction parallel to the pressure direction. The electrical conductivity, Seebeck coefficient and power factor in the range of 300K-400K are shown in Table 4.

[0043] Table 4

[0044] 300K 350K 400K Conductivity (10 4 S / m)

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Abstract

The invention discloses a rapid preparation of high-performance p-type or n-type Bi that is easy to cut 2 Te 3 A method based on thermoelectric materials, using high-purity simple substance as the initial raw material, melting to obtain p-type or n-type Bi 2 Te 3 Base ingot; then low-speed melt spinning, and the obtained flakes are laid flat in the mold for spark plasma activation sintering to obtain high-performance p-type or n-type Bi that is easy to cut 2 Te 3 based thermoelectric materials. In the present invention, the oriented thin ribbons obtained by direct sintering and spinning of the melt make the thermoelectric material blocks obtained by final sintering retain the orientation of the thin ribbons, and the optimal performance direction is consistent with that of the zone melting samples while improving the mechanical properties. The thermoelectric materials can directly use the mature zone melting material cutting and subsequent processing technology, which significantly improves the material utilization rate and post-processing efficiency compared with conventional polycrystalline materials.

Description

technical field [0001] The invention belongs to the field of energy technology, and provides a high-performance p-type or n-type Bi that can be rapidly prepared and easily cut. 2 Te 3 method based on thermoelectric materials. [0002] technical background [0003] As a new type of clean renewable energy material, thermoelectric materials can realize the direct conversion of heat energy and electric energy. They have excellent characteristics such as no pollution, no loss, and high reliability. They are expected to greatly improve energy utilization and alleviate environmental pollution. They have attracted many researches attention. Among a series of materials studied in recent years, bismuth telluride-based compounds are currently commercially available and have the best performance near room temperature thermoelectric materials. [0004] The bismuth telluride-based compound is a trigonal crystal system and belongs to the space group R-3m. Along the crystallographic c-ax...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L35/16H01L35/34C30B29/46C30B28/02H10N10/852H10N10/01
CPCC30B29/46C30B28/02H10N10/852H10N10/01
Inventor 唐新峰张政楷苏贤礼唐昊
Owner 武汉新赛尔科技有限公司