Trench gate mosfet device and manufacturing method thereof

Abstract

The present application provides a trench gate MOSFET device and a manufacturing method thereof, belonging to the technical field of semiconductors. The trench gate MOSFET device comprises: a substrate, an epitaxial layer, a well region, a source region, an interlayer dielectric layer and a first layer stacked in sequence. an electrode layer; and a trench gate, including a gate trench, a gate dielectric layer and a gate conductive material layer, a part of the gate trench is located in the epitaxial layer, a part is located in the well region, and the gate dielectric layer is located at the bottom of the gate trench On the surface and side, the gate conductive material layer is filled in the gate trench; the source contact hole is formed by extending the interlayer dielectric layer to the well region, and the first electrode layer is connected to the source region and the well region through the source contact hole, and the source contact hole It includes a first contact hole and a second contact hole that communicate with each other, the diameter of the first contact hole is larger than that of the second contact hole, and the first contact hole is distributed close to the first electrode layer. The present application improves the device's resistance to single event burnout.

Description

technical field [0001] The application belongs to the technical field of semiconductors, and relates to a trench gate MOSFET device and a manufacturing method thereof. Background technique [0002] In the field of semiconductor technology, Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) is a field-effect transistor (field-effect transistor) that can be widely used in analog circuits and digital circuits. , The trench gate MOSFET can achieve low resistance and high current due to its small cell size. When applied in a specific environment, continuous high-energy particle radiation can easily induce single event effects in MOSFETs, resulting in catastrophic accidents in the application system. Therefore, it is necessary to provide a trench-gate MOSFET device to improve the anti-single event capability of the device . [0003] A trench-gate MOSFET device provided by the related art includes a gate layer for controlling switching of a transistor; a drain and a sourc...

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Problems solved by technology

[0005] When the trench gate MOSFET device is in the blocking state, the current pulse generated by the high-energy particle radiation triggers the parasitic triode, which causes a single event effect and affects the normal operation of the device.

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