Exhaust gas purification device and semiconductor process system

Abstract

The exhaust gas purification device provided by the present invention is connected between a process chamber and a vacuum pump, and includes a cavity, and the cavity includes a main cavity for receiving the exhaust gas discharged from the process chamber and a sandwich cavity surrounding the main cavity, wherein the exhaust gas purification The two ends of the device are respectively provided with an air inlet and an air outlet that communicate with the main cavity. The air inlet is connected to the gas discharge port of the process chamber, and the air outlet is connected to the suction port of the vacuum pump. The interlayer cavity is used to pass the cooling medium. , to cool the exhaust gas flowing through the main cavity. With the aid of the exhaust gas purification device of the present invention, the exhaust gas is cooled down, the fouling substances in the cooled exhaust gas are scaled in the cavity, the purified exhaust gas is discharged from the exhaust gas purification device, and enters the vacuum pump, and the exhaust gas purification device replaces the vacuum pump to take over the exhaust gas. In addition, the cleaning process of the exhaust gas purification device is simpler than that of the vacuum pump, which reduces the cleaning time and improves the production capacity. The present invention also provides a semiconductor processing system.

Description

technical field [0001] The invention belongs to the technical field of semiconductor manufacturing, and in particular relates to an exhaust gas purification device and a semiconductor process system. Background technique [0002] Silicon epitaxy refers to the deposition of a layer of single crystal silicon on the surface of a silicon wafer by chemical vapor deposition. The silicon source used to deposit single crystal silicon is usually derived from SiH decomposed or reduced at high temperature 4 , SiH 2 Cl 2 , SiHCl 3 and SiCl 4 . Under normal circumstances, the silicon atoms deposited in the process chamber are less than 1% of the total silicon source, and a large number of undeposited silicon atoms after decomposition are directly discharged from the process chamber through the exhaust pipe along with the undecomposed silicon source gas and hydrogen carrier. Exhaust gas treatment system. For decompressed silicon epitaxy equipment, a vacuum pump is usually arranged ...

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Problems solved by technology

[0004] Although the above-mentioned tail gas treatment system can slow down the deposition rate of fouling substances in the tail gas pipeline and vacuum pump to a certain extent, since the vacuum pump needs a good heat dissipation environment during operation, the exhaust gas temperature is too high will affect the service life of the vacuum pump, so the vacuum pump The pump body itself cannot wrap the heating tape, resulting in fouling inside the vacuum pump

Therefore, during the process, the vacuum pump needs to be regularly disassembled for cleaning and maintenance. Not only is the cleaning and maintenance process complex and technically difficult, but it also takes a long time and affects production capacity.

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