Annealing method and device
A technology of annealing and annealing temperature, which is applied in the manufacture of electrical components, circuits, semiconductors/solid-state devices, etc., can solve problems such as unfavorable conditions, long annealing time, control, etc., and achieve the effect of achieving accurate control and meeting actual needs
Active Publication Date: 2020-12-04
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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However, the annealing time used in this annealing method is relatively long, usually on the order of seconds, which is not conducive to the control of the internal composition of the annealed film. For example, for the ion-implanted film to be annealed, it is easy to cause the The problem of redistribution of impurity concentration is not conducive to the control of the depth, concentration and position of ion implantation in the annealed film layer, so it cannot meet the actual needs
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[0031] In order to make the above-mentioned purpose, features and advantages of the present application more obvious and understandable, the specific implementation manners of the present application will be described in detail below in conjunction with the accompanying drawings.
[0032] In the following description, a lot of specific details are set forth in order to fully understand the application, but the application can also be implemented in other ways different from those described here, and those skilled in the art can do it without violating the content of the application. By analogy, the present application is therefore not limited by the specific embodiments disclosed below.
[0033] Secondly, the present application is described in detail in combination with schematic diagrams. When describing the embodiments of the present application in detail, for the convenience of explanation, the cross-sectional view showing the device structure will not be partially enlarged...
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Abstract
An embodiment of the invention provides an annealing method and device. The annealing method comprises the steps of: providing a to-be-annealed film layer which has a to-be-annealed region; determining preset annealing duration corresponding to preset annealing depth according to the preset annealing depth of the to-be-annealed region and a pre-established corresponding relationship between the annealing depth and the annealing duration; and irradiating the to-be-annealed region for the preset annealing duration by using a continuous laser. Therefore, in the annealing method of the invention,the continuous laser can be used for irradiating the to-be-annealed film layer, and the irradiation time of the continuous laser is not limited by the pulse width, so that the irradiation time can beaccurately controlled and the controllable range is relatively wide, and after the preset annealing duration corresponding to the preset annealing depth is determined, the preset annealing duration ofthe to-be-annealed film layer can be controlled by controlling the irradiation time of the continuous laser, the annealing depths under different scenes are met, accurate control over the annealing depths is achieved, and the actual requirements are better met.
Description
technical field [0001] The invention relates to the field of semiconductor devices and their manufacture, in particular to an annealing method and device. Background technique [0002] In the manufacturing process of semiconductor devices, there is a demand for high-temperature annealing of the film to be annealed. For example, after ion implantation is performed on the film to be annealed, high-temperature annealing is required to activate the implanted impurities. Currently, rapid thermal annealing (rapid thermal annealing, RTA) can be used to rapidly heat the film to be annealed, so that the implanted impurities in the film to be annealed can be quickly activated at high temperature. However, the annealing time used in this annealing method is relatively long, usually on the order of seconds, which is not conducive to the control of the internal composition of the annealed film. For example, for the ion-implanted film to be annealed, it is easy to cause the The problem o...
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IPC IPC(8): H01L21/268H01L21/67
CPCH01L21/268H01L21/67115
Inventor 刘敏郑柳
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI