Photosensitive semiconductor structure and photosensitive waveband adjusting method thereof, and photoelectric device composed of photosensitive semiconductor structure
A semiconductor and waveband technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problem that the optical signal waveband cannot be adjusted arbitrarily, and achieve the effects of diversified adjustment methods, wide adjustable range and easy adjustment.
Active Publication Date: 2020-12-29
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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[0004] Among them, some photodetectors use silicon oxide to select the wavelength band of the optical signal. Due to the specific physical and chemical properties of the silicon dioxide layer, the optical signal band is also specific and cannot be adjusted arbitrarily.
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[0028] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. It should be understood, however, that these descriptions are exemplary only, and are not intended to limit the scope of the present disclosure. Also, in the following description, descriptions of well-known structures and techniques are omitted to avoid unnecessarily obscuring the concept of the present disclosure.
[0029] Various structural schematic diagrams according to embodiments of the present disclosure are shown in the accompanying drawings. The figures are not drawn to scale, with certain details exaggerated and possibly omitted for clarity of presentation. The shapes of the various regions and layers shown in the figure, as well as their relative sizes and positional relationships are only exemplary, and may deviate due to manufacturing tolerances or technical limitations in practice, and those skilled in the art will Regions / layers with different shapes, s...
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The invention relates to a photosensitive semiconductor structure and a photosensitive waveband adjusting method thereof, and a photoelectric device composed of the photosensitive semiconductor structure. The method for adjusting the photosensitive waveband of the photosensitive semiconductor structure comprises the steps that: the photosensitive semiconductor structure comprises a substrate and aphotosensitive layer, wherein the photosensitive layer is subjected to at least one of treatment a and treatment b; the treatment a: carrying out annealing treatment with the annealing temperature of750-1200 DEG C, and adjusting the photosensitive waveband by controlling the annealing temperature and / or time; and treatment b: doping boron and / or phosphorus, and adjusting the photosensitive waveband by controlling the doping ratio of boron and / or phosphorus. According to the invention, the refractive index and extinction coefficient of the photosensitive layer can be adjusted through annealing or doping treatment, so that the photosensitive waveband is adjusted, and the type and application range of the photosensitive device are expanded.
Description
technical field [0001] The invention relates to the field of photosensitive devices, in particular to a photosensitive semiconductor structure and a photosensitive wavelength band adjustment method thereof, and an optoelectronic device composed of the same. Background technique [0002] A photodetector is a device that converts an optical signal into an electrical signal. It is widely used, for example, in high-energy physics, space physics, security inspection, medical imaging and other fields. [0003] Because it is a photodetector, it needs a photosensitive area to receive the optical signal that meets the requirements of the device, and then convert it into the required electrical signal. Therefore, the selection of a specific wavelength band of light received by the photosensitive area is very important. [0004] Among them, some photodetectors use silicon oxide to select the wavelength band of the optical signal. Since the physical and chemical properties of the sili...
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IPC IPC(8): H01L31/101H01L31/18
CPCH01L31/101H01L31/186H01L31/1864Y02P70/50
Inventor 李亭亭项金娟张青竹王晓磊贺晓彬唐波殷华湘李俊峰
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI