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Photosensitive semiconductor structure and its photosensitive band adjustment method, optoelectronic device composed of

A technology of semiconductors and wavelength bands, applied in semiconductor devices, electrical components, circuits, etc., can solve the problem that the wavelength band of optical signals cannot be adjusted arbitrarily, and achieve the effect of diversified adjustment methods, easy adjustment, and wide adjustable range

Active Publication Date: 2022-06-21
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] Among them, some photodetectors use silicon oxide to select the wavelength band of the optical signal. Due to the specific physical and chemical properties of the silicon dioxide layer, the optical signal band is also specific and cannot be adjusted arbitrarily.

Method used

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  • Photosensitive semiconductor structure and its photosensitive band adjustment method, optoelectronic device composed of
  • Photosensitive semiconductor structure and its photosensitive band adjustment method, optoelectronic device composed of
  • Photosensitive semiconductor structure and its photosensitive band adjustment method, optoelectronic device composed of

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Embodiment Construction

[0028] Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings. It should be understood, however, that these descriptions are exemplary only, and are not intended to limit the scope of the present disclosure. Also, in the following description, descriptions of well-known structures and techniques are omitted to avoid unnecessarily obscuring the concepts of the present disclosure.

[0029] Various structural schematic diagrams according to embodiments of the present disclosure are shown in the accompanying drawings. The figures are not to scale, some details have been exaggerated for clarity, and some details may have been omitted. The shapes of the various regions and layers shown in the figures, as well as their relative sizes and positional relationships are only exemplary, and in practice, there may be deviations due to manufacturing tolerances or technical limitations, and those skilled in the art should Regions / la...

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Abstract

The invention relates to a photosensitive semiconductor structure, a method for adjusting the photosensitive band, and a photoelectric device composed of the same. A method for adjusting the photosensitive wavelength band of a photosensitive semiconductor structure, comprising: the photosensitive semiconductor structure includes a substrate and a photosensitive layer; performing at least one of treatment a or treatment b on the photosensitive layer, wherein: treatment a: annealing treatment, annealing The temperature is 750-1200°C, and the photosensitive band is adjusted by controlling the annealing temperature and / or time; treatment b: doping boron and / or phosphorus, and the photosensitive band is adjusted by controlling the doping ratio of boron and / or phosphorus. The invention can adjust the refractive index and extinction coefficient of the photosensitive layer through annealing or doping treatment, thereby adjusting the photosensitive wavelength band, and expanding the type and application range of the photosensitive device.

Description

technical field [0001] The invention relates to the field of photosensitive devices, in particular to a photosensitive semiconductor structure, a photosensitive band adjustment method, and an optoelectronic device composed thereof. Background technique [0002] A photodetector is a device that converts optical signals into electrical signals. It has a wide range of applications, such as high-energy physics, space physics, security inspection, medical imaging and other fields. [0003] Because it is a photodetector, it needs to have a photosensitive area to receive the optical signal that meets the requirements of the device, and then convert it into the required electrical signal. Therefore, the selection of a specific wavelength band of the light received by the photosensitive area is very important. [0004] Among them, some photodetectors use silicon oxide to select the wavelength band of the optical signal. Since the physical and chemical properties of the silicon diox...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/101H01L31/18
CPCH01L31/101H01L31/186H01L31/1864Y02P70/50
Inventor 李亭亭项金娟张青竹王晓磊贺晓彬唐波殷华湘李俊峰
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI