Semiconductor device production method, substrate processing device, and program
A technology of substrate processing device and manufacturing method, which is applied in the direction of semiconductor/solid-state device manufacturing, electrical components, gaseous chemical plating, etc., and can solve problems such as difficult application
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Embodiment 1
[0167] Next, based on Figure 13 (A) is described for the following case: using the above-described substrate processing apparatus 10, using the above-described substrate processing steps, when exposed to WF as a modifying gas 6 In the case of forming a titanium nitride (TiN) film on the SiN layer in the atmosphere and without exposure to WF 6 In the case where a TiN film is formed on a SiN layer in a gas, there is a difference in the film thickness of the formed TiN film.
[0168] When exposed to WF 6 In case and not exposed to WF 6 In the case of Figure 13 As shown in (A), it was confirmed that there was almost no difference in the formed film thickness on the surface of the SiN layer as the base film, and the film thickness of the TiN film became thicker according to the number of processing cycles. That is, confirming that regardless of exposure to WF 6 In , the TiN film is formed on the surface of the SiN layer. like Figure 8 As shown in (C), this is considered t...
Embodiment 2
[0172] Next, relative to SiO is defined by the following formula 2layer can preferentially form the film thickness T of TiN film on the SiN layer SiN .
[0173] T SiN = Film formation rate on SiN layer × (SiO 2 Latency on layer - Latency on SiN layer)... (Equation 1)
[0174] with the above Figure 13 (A) has WF 6 The case of exposure is taken as an example. Since the film formation rate of the TiN film on the SiN layer is 0.26nm / cycle, the incubation period on the SiN layer is 33 cycles, and the SiO 2 The latency on the layer is 256 cycles, so T is calculated from Equation 1 above SiN = 5.8nm. That is, it is possible without SiO 2 A TiN film was formed on the SiN layer and a 5.8nm TiN film was selectively formed on the SiN layer. Figure 14 Show T SiN with WF 6 Dependence on the number of pulses of gas supply.
[0175] like Figure 14 As shown, it can be seen that in the WF 6 When the pulse supply of gas is repeated about 60 times, T SiN Shows a tendency toward...
Embodiment 3
[0177] Next, based on Figure 15 (A) explains what difference exists in the film thickness of the TiN film formed in the following case: using the substrate processing apparatus 10 described above, in the substrate processing step described above, (a) is not exposed in WF 6 in gas and in SiO 2 The case where a TiN film is formed on the layer; (b) pulsed WF 6 gas while in SiO 2 The case where a TiN film is formed on the layer; (c) continuous supply of WF 6 gas while in SiO 2 The case where a TiN film is formed on the layer. In the case of the pulse supply of (b), the WF 6 The pulse supply of gas is set to 60 cycles (WF 6 The total exposure time of the gas is 10 minutes), in the continuous supply of (c), the WF 6 The exposure time of the gas was set to 10 minutes, so that the total exposure time of (b) and (c) was the same.
[0178] It is confirmed that the following conditions are not exposed to WF in (a) 6 In the case of gas, the incubation period was 16 cycles, in t...
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