Supercharge Your Innovation With Domain-Expert AI Agents!

A kind of method for preparing graphene crystal thin film by electron beam scanning

An electron beam scanning, graphene technology, applied in crystal growth, chemical instruments and methods, single crystal growth and other directions, can solve the problem that the quality of graphene crystal is easily affected by gas impurities, the efficiency of graphene crystal thin film is difficult to be greatly improved, and the laser problems such as small beam spot diameter, to achieve the effect of high energy conversion efficiency, good quality and simplified process

Active Publication Date: 2021-06-08
AVIC BEIJING AERONAUTICAL MFG TECH RES INST
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] At present, one of the methods suitable for large-scale preparation of graphene crystal thin films is the laser-induced graphene method, but laser-induced graphene is usually carried out in an atmospheric environment, and the photothermal and photochemical processes generated when the laser acts on carbon polymers are used to induce Graphene, the quality of graphene crystals produced is easily affected by gas impurities, and the laser beam spot diameter is generally relatively small, so it is difficult to greatly improve the efficiency of scanning and preparing graphene crystal films

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A kind of method for preparing graphene crystal thin film by electron beam scanning
  • A kind of method for preparing graphene crystal thin film by electron beam scanning
  • A kind of method for preparing graphene crystal thin film by electron beam scanning

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0053] refer to Figure 1 ~ Figure 3 , a kind of electron beam scanning method of the present invention prepares graphene crystal film, detailed steps are as follows:

[0054] Step 1 S101, raw material installation: laying one or more carbon polymer films with length L and width W on the preparation areas 23-26 of the metal substrate 2;

[0055] In this step, the metal substrate 2 is provided with a beam calibration area 21 and a process parameter testing area 22. The beam calibration area 21 is a ceramic sheet 211 provided with a beam intensity calibration hole 212 and a beam spot size range calibration area. The area covered on the metal substrate 2, the beam spot size range calibration area is on the ceramic sheet 211 on the ring concentric with the beam intensity calibration hole 212, and the corresponding width, Slots of the same length. The process parameter test area 22 is an area covered with a carbon polymer film of the same material as the preparation area 23-26 ne...

Embodiment 2

[0074] It needs to be clarified that in the present invention, whether the beam spot size range is accurately determined is related to the overlapping ratio of the beam spots of two adjacent rows of electron beam scanning, which will affect the quality of the graphene crystal film prepared by electron beam scanning. When scanning, the circular scanning range of the electron beam scanning covers the calibration area of ​​100 μm to 500 μm successively, and at the same time adjust the focusing current I of the focusing coil 13 of the electron gun f , the beam spot diameter D of the electron beam 11 is set to a given range, and the focusing current I of the electron gun focusing coil 13 is recorded f1 , after adjusting the focus current, turn off the beam current output of electron gun 1.

[0075] In the present invention, the beam calibration area 21 is set on the substrate 2, and the method for determining the size range of the beam spot is as follows:

[0076] In the beam inte...

Embodiment 3

[0087] In this embodiment, a graphene crystal film is prepared by taking a polyimide film covered with a thickness of 125 μm in any preparation area as an example. The height H of the preparation area from the beam outlet of the electron gun 1 is 200mm to 300mm, and the working voltage U of the electron gun 1 hv Set to -20kV, beam current I b Set to 3mA, electron gun 1 focusing coil 13 focusing current 560mA, the beam spot of the electron beam is controlled within the range of 500μm.

[0088] It should be noted that, in the present invention, the origin of the electron beam 11 scanning coordinates can be set at any apex position or central point of the preparation area used. If the origin of the electron beam 11 scanning coordinates is different, the X direction, The current value set by the Y-direction drive circuit is positive and negative. According to the electron beam 11 scanning coordinate origin setting position, judge the quadrant of the processed polyimide film in th...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
Login to View More

Abstract

A method for preparing a graphene crystal film by electron beam scanning, the method comprising the following steps: beam spot calibration position adjustment; beam spot range calibration; process parameter calculation; process parameter test; preparation area positioning; graphene crystal film preparation. In the present invention, the graphene crystal film is prepared by scanning the surface of the carbon polymer film with an electron beam in a vacuum environment, and there are many adjustable process parameters, such as working voltage, beam current, focusing current, working distance, scanning track, scanning frequency, and scanning range. It is adjustable, so there are many working parameters that can be combined, and it is more able to meet the needs of different specifications and different uses of graphene crystal film preparation; in addition, the graphene crystal film is prepared in a vacuum environment, which is not easily affected by other impurity gases. The quality of the crystal thin film is better, and compared with the laser, the energy conversion efficiency is high when the electron interacts with the material, and there is no need to coat the photosensitive material on the surface of the material during the preparation process, which simplifies the process.

Description

technical field [0001] The invention relates to the technical field of preparing graphene crystal thin films, in particular to a method for preparing graphene crystal thin films by electron beam scanning. Background technique [0002] Graphene has broad application prospects in various industries due to its high strength, high electrical conductivity, and good thermal conductivity. At present, graphene has two forms, one is powder and the other is film. The preparation method of graphene powder has become increasingly mature, and the preparation of graphene crystal film mainly includes chemical vapor deposition method, outer edge growth method, and exfoliation method. The method prepared by the chemical vapor deposition method prepares graphene crystal films with high quality, but the preparation process is complicated, the cost is high, and the efficiency is low; the outer edge growth method has strict requirements on temperature, and the graphene prepared by this method i...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C30B30/00C30B29/02
CPCC30B29/02C30B30/00
Inventor 许海鹰
Owner AVIC BEIJING AERONAUTICAL MFG TECH RES INST
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com