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Three-dimensional resistive memory and forming method thereof

A resistive memory, three-dimensional technology, applied in the direction of electric solid-state devices, circuits, electrical components, etc.

Active Publication Date: 2021-01-05
WINBOND ELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The aforementioned bit lines are vertically separated from each other by an insulating layer

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  • Three-dimensional resistive memory and forming method thereof
  • Three-dimensional resistive memory and forming method thereof
  • Three-dimensional resistive memory and forming method thereof

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Embodiment Construction

[0046] Embodiments of three-dimensional resistive memories and methods of forming the same are provided, particularly three-dimensional resistive memories with selectors. In some embodiments of the present invention, selector pillars, rather than transistors, are used to control the direction of current flow, and the drive current is increased because polysilicon is not required as the channel material. The selector posts can reduce the sneak current, thus improving the performance of the 3D resistive memory. Furthermore, the three-dimensional resistive memory with selector pillars in the embodiments of the present invention can be formed with simpler process steps than those with transistors. In the continuation of the present invention, a method for forming a three-dimensional resistive memory according to an embodiment of the present invention will be discussed.

[0047] Figure 1A , Figure 2A , image 3 , Figure 4A , Figure 5A and Figure 6A depicts the formation ...

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Abstract

The invention provides a three-dimensional resistive memory and a forming method thereof. The three-dimensional resistive memory includes a resistive switching pillar, an electrode pillar disposed within the resistive switching pillar, stacked bit lines adjacent to the resistive switching pillar, a plurality of sidewall contacts between each of the bit lines and the resistive switching pillar, anda selector pillar extending through the stacked bit lines. The bit lines are vertically separated from each other by an insulating layer. The selector pillar contacts each of the sidewall contacts.

Description

technical field [0001] The present invention relates to three-dimensional resistive memory and its forming method. Background technique [0002] A resistive random access memory (RRAM) is a non-volatile memory. RRAM has been extensively developed recently due to its advantages including simple structure, low operating voltage, fast operating time, multi-bit storage, low cost, and high durability. The basic structure of commonly used RRAM consists of a transistor and a resistor (1T1R). The resistance value of the resistor can be changed by changing the applied bias voltage, so that the device can be in a high-resistance state or a low-resistance state, thereby recognizing a digital signal of 0 or 1. [0003] Non-volatile memories are being expanded into three dimensions to effectively reduce cell size by increasing storage bits per unit area. A common type of three-dimensional memory is a cross-point array memory. However, the formation method of cross-point array memory ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/24H01L45/00
CPCH10B63/845H10N70/24H10N70/011H10N70/8416H10N70/826H10N70/8833H10N70/063H10B63/84H10N70/021H10N70/841
Inventor 陈达
Owner WINBOND ELECTRONICS CORP
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