Containing cavity and wafer electroplating system including containing cavity
A technology for containing chambers and wafers, applied in circuits, electrolytic processes, electrolytic components, etc., can solve the problem of low flow rate of electroplating solution, achieve the effect of increasing the passing speed and improving the results of the electroplating process
Pending Publication Date: 2021-01-12
硅密芯镀(海宁)半导体技术有限公司
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Problems solved by technology
[0004] The technical problem to be solved by the present invention is to overcome the defect in the prior art that the electroplating solution has a relatively low flow rate after being filtered by bubbles, and to provide an accommodating chamber and a wafer electroplating system including it
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Embodiment Construction
[0063] The present invention is further illustrated below by means of examples, but the present invention is not limited to the scope of the examples.
[0064] This embodiment provides a wafer electroplating system for performing electroplating on wafers. The wafer electroplating system includes a storage chamber, an electroplating chamber, a delivery pipeline, a driving pump and an electroplating solution. The delivery pipeline is connected between the storage chamber and the electroplating chamber, and the driving pump is used to drive the electroplating solution between the storage chamber, the electroplating chamber and the delivery pipeline. Circular flow. The wafer is electroplated in the electroplating chamber, and the storage chamber is used to store the electroplating solution overflowed from the electroplating chamber. Due to the continuous loss of the electroplating solution in the electroplating chamber, the electroplating solution in the storage chamber will be pu...
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The invention discloses a containing cavity and a wafer electroplating system including the containing cavity. The interior of the containing cavity is divided into a first containing unit and a second containing unit, wherein the first containing unit and the second containing unit communicate with the outside. Electroplating liquid in the first containing unit communicates with electroplating liquid in the second containing unit through a first channel, a filtering unit is arranged corresponding to the first channel, and the filtering unit can filter bubbles in the electroplating liquid flowing through the first channel. The pressure borne by the electroplating liquid in the first containing unit and the second containing unit is equal to the atmospheric pressure under the condition thatthe electroplating liquid does not flow, in the circular flowing process of the electroplating liquid, the electroplating liquid is continuously supplemented to the first containing unit, the electroplating liquid is continuously drawn out of the second containing unit, and therefore the height of the liquid level in the first containing unit is larger than the height of the liquid level in the second containing unit. The electroplating liquid passes through the filtering unit under the action of the atmospheric pressure through the liquid level difference, and the passing speed is obviouslyincreased relative to the scheme of utilizing the pipeline pressure.
Description
technical field [0001] The invention relates to the field of semiconductor processing, in particular to an accommodating chamber and a wafer electroplating system including the chamber. Background technique [0002] In the process results of wafer electroplating, one of the key indicators is the uniformity of the wafer surface. The more uniform the wafer surface, the better the wafer electroplating process. This indicator is related to the bubbles in the electroplating solution when the wafer is electroplating. The more bubbles in the electroplating solution, the worse the surface uniformity of the wafer, which leads to the worse of the wafer electroplating process. Therefore, in the process of transporting the electroplating solution in the electroplating solution containing chamber to the electroplating chamber for electroplating operation, technicians will first remove the bubbles in the electroplating solution, so as to improve the wafer electroplating process result. ...
Claims
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IPC IPC(8): C25D17/00C25D7/12C25D21/04C25D21/06
CPCC25D17/001C25D7/12C25D21/04C25D21/06
Inventor 史蒂文·贺·汪
Owner 硅密芯镀(海宁)半导体技术有限公司