Three-dimensional morphology measuring method and device

Abstract

The invention provides a three-dimensional morphology measurement method, which comprises the following steps: (a) establishing a theoretical spectrum database corresponding to the contour structure of a sample model, the theoretical spectrum database comprising the contour parameters of the sample model and the theoretical spectrum corresponding to the contour parameters; (b) measuring the measurement area of the sample by using a first measurement method to obtain a first type parameter of the sample in the measurement area, the first type parameter being one of the contour parameters; (c) measuring the measurement area of the sample by adopting a second measurement method to obtain a measurement spectrum of the sample in the measurement area; (d) obtaining a theoretical spectrum corresponding to the first type parameter obtained in the step (b) from a theoretical spectrum database; and (e) matching the measurement spectrum obtained in the step (c) with the theoretical spectrum obtained in the step (d), and taking the contour parameter corresponding to the theoretical spectrum with the highest matching degree as the contour parameter of the sample. The method has the advantage that the three-dimensional morphology of the sample can be accurately and quickly measured.

Description

technical field [0001] The invention relates to the field of measurement technology, in particular to a three-dimensional shape measurement method and a measurement device. Background technique [0002] Currently, the optical critical dimension (OCD, Optical Critical Dimension) technology is used to measure the three-dimensional shape of the sample. The optical critical dimension measurement technology is mainly based on the measurement of film thickness, using the reflection of elliptically polarized light to obtain the microscopic shape of the sample. [0003] The advantages of optical critical dimension measurement technology are: 1. Using optical methods for measurement, the speed is fast, which is conducive to improving the output speed (through put); 2. The long-term stability monitoring of the process can be realized by establishing a database (library) Measurement; 3. The collected spectrum is convenient for offline analysis. However, it also has disadvantages: 1. ...

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Problems solved by technology

However, it also has disadvantages: 1. For structures with a large aspect ratio, the measurement accuracy of the critical dimension (CD) is poor, that is, the measurement of the critical dimension (CD) of the structure with a large aspect ratio has certain limitations; 2. .The sensitivity of three-dimensional shape measurement for thin film layers or structures with overlapping layers of film layers (interference between film layers) is low; 3. It takes a long time to establish a measurement model

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