Unlock instant, AI-driven research and patent intelligence for your innovation.
Recycling method of seed crystals used for casting single crystals
What is Al technical title?
Al technical title is built by PatSnap Al team. It summarizes the technical point description of the patent document.
A seed crystal and single crystal technology, which is applied in the field of seed crystal reuse, can solve the problems affecting the development of cast single crystal silicon industry, the cost of cast single crystal silicon wafers remains high, and the cost is high, so as to reduce the cost and quality of seed crystals. Good, the effect of suppressing dislocation
Inactive Publication Date: 2021-01-15
尹翠哲 +1
View PDF5 Cites 0 Cited by
Summary
Abstract
Description
Claims
Application Information
AI Technical Summary
This helps you quickly interpret patents by identifying the three key elements:
Problems solved by technology
Method used
Benefits of technology
Problems solved by technology
Since the cost of monocrystalline silicon seed crystals mainly comes from the Czochralski method monocrystalline silicon rods, the cost is high. At the same time, one furnace of monocrystalline silicon seed crystals
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more
Image
Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
Click on the blue label to locate the original text in one second.
Reading with bidirectional positioning of images and text.
Smart Image
Examples
Experimental program
Comparison scheme
Effect test
Embodiment 1
[0028] A method for reusing seed crystals for casting single crystals, comprising the following steps:
[0029] Step a: straight pull the single crystal rod to remove the edge skin, and then cut to obtain a rectangular parallelepiped seed crystal. The seed crystal is divided into two types. figure 1 shown in white and black, respectively.
[0030] Step b: Lay the two kinds of seed crystals described in step (a) alternately on the bottom of the crucible to form a seed layer consisting of 9 seed crystals, such as figure 1 shown.
[0031] Step c Place primary polysilicon material and polycrystalline recycled materials such as head and tail edges on the seed crystal layer, such as figure 2 shown.
[0032] Step d: Put the crucible filled with polycrystalline silicon material into an ingot casting furnace, and obtain cast monocrystalline silicon ingots by semi-melting process.
[0033] Step e: square the cast monocrystalline silicon ingot obtained in step (d) to obtain a small ...
Embodiment 2
[0037] A method for reusing seed crystals for casting single crystals, comprising the following steps:
[0038] Step a: straight pull the single crystal rod to remove the edge skin, and then cut to obtain a rectangular parallelepiped seed crystal. The seed crystal is divided into two types. figure 1 shown in white and black, respectively.
[0039] Step b Lay the two kinds of seed crystals described in step (a) alternately on the bottom of the crucible to form a seed layer consisting of 16 seed crystals, such as Figure 5 shown.
[0040] Step c Place primary polysilicon material and polycrystalline recycled materials such as head and tail edges on the seed crystal layer, such as Figure 6 shown.
[0041] Step d: Put the crucible filled with polycrystalline silicon material into an ingot casting furnace, and obtain cast monocrystalline silicon ingots by semi-melting process.
[0042] Step e: square the cast monocrystalline silicon ingot obtained in step (d) to obtain a small...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More
PUM
Login to View More
Abstract
The invention provides a recycling method of seed crystals during production of casting single crystals. The method comprises the following steps: (a) removing the edge skin of a Czochralski single crystal rod, and conducting cutting to obtain cuboid seed crystals; (b) laying the seed crystals at the bottom of a crucible; (c) placing primary polycrystalline silicon materials, and heads, tails andedges of other recycled polycrystalline materials on a seed crystal layer; (d) preparing a cast monocrystalline silicon ingot by adopting a semi-melting process; (e) squaring the cast monocrystallinesilicon ingot to obtain small square ingots; (f) edging tailing seed crystals to obtain small seed crystals; and (g) laying the small seed crystals at the bottom of the crucible, and repeating the step c and the step d to obtain casting single crystal ingots. According to the method, the seed crystals are repeatedly utilized, and the seed crystal cost for casting the monocrystalline silicon ingotsis greatly reduced.
Description
technical field [0001] The invention relates to the field of photovoltaic manufacturing, in particular to a seed crystal recycling method. Background technique [0002] At present, the general steps of producing cast single crystal are as follows: Lay a layer of single crystal seed crystal on the bottom of the crucible, install the head material, tail material, side skin and primary polysilicon material of the normal ingot on the single crystal seed crystal, and use the semi-melting process to obtain Cast single crystal. Since the cost of monocrystalline silicon seed crystals mainly comes from the Czochralski method monocrystalline silicon rods, the cost is high. At the same time, one furnace of monocrystalline silicon seed crystals can usually only produce one cast monocrystalline silicon ingot, resulting in high cost of cast monocrystalline silicon wafers It has seriously affected the development of the foundry monocrystalline silicon industry. [0003] The invention pro...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More
Application Information
Patent Timeline
Application Date:The date an application was filed.
Publication Date:The date a patent or application was officially published.
First Publication Date:The earliest publication date of a patent with the same application number.
Issue Date:Publication date of the patent grant document.
PCT Entry Date:The Entry date of PCT National Phase.
Estimated Expiry Date:The statutory expiry date of a patent right according to the Patent Law, and it is the longest term of protection that the patent right can achieve without the termination of the patent right due to other reasons(Term extension factor has been taken into account ).
Invalid Date:Actual expiry date is based on effective date or publication date of legal transaction data of invalid patent.
Login to View More 
Login to View More