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Memory programming method and device and electronic equipment

A memory and storage table technology, applied in the field of memory, can solve problems such as increasing programming time

Active Publication Date: 2021-01-26
YANGTZE MEMORY TECH CO LTD
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

[0004] However, in the current verify operation, memory cells belonging to different program levels or states need to be verified sequentially using different verify voltages, which increases the program time

Method used

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  • Memory programming method and device and electronic equipment
  • Memory programming method and device and electronic equipment
  • Memory programming method and device and electronic equipment

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Embodiment Construction

[0022] The present disclosure will now be discussed with reference to various exemplary embodiments. It should be understood that the discussion of these embodiments is only for the purpose of enabling those skilled in the art to better understand and thus implement the embodiments of the present disclosure, rather than teaching any limitation to the scope of the present disclosure.

[0023] In current NAND program verify operations, each program level corresponds to a verify voltage. When at least one memory cell of the same level is to be verified, a corresponding verification voltage is applied to the selected word line WL, wherein the verification voltage needs to be compared with the threshold voltage of the memory cell during the discharge process of the sensing node SO to determine the Whether the storage unit of the level passes validation. The SO discharge result of the NAND cell can be stored in the latch of the page buffer, which is then used to determine the progr...

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Abstract

A memory device includes: a memory cell array including a plurality of memory cells; and a controller coupled to the memory cell array and configured to: apply the same verification voltage to at least one group of memory cells in the memory cell array, wherein the set of memory cells includes at least a first memory cell to be programmed to a first target programming level and a second memory cell to be programmed to a second target programming level higher than the first target programming level; after a first verification time period, obtain a first verification result for the first storageunit; and after a second verification time period, obtain a second verification result for a second storage unit, the second verification time period including the first verification time period.

Description

technical field [0001] The present invention relates to memory, and in particular to a programming method, device and electronic equipment for non-volatile memory. Background technique [0002] Recently, the field of semiconductor memory has received more and more attention. Semiconductor memory can be both volatile and nonvolatile. Non-volatile semiconductor memory such as NAND flash memory, which retains data even when power is not applied, has been widely used in cellular phones, digital cameras, personal digital assistants, mobile computing devices, non-mobile computing devices and other devices . [0003] At present, for NAND flash memory, the method of incremental stepping pulse programming (ISPP) is generally used for programming, that is, the memory cells are programmed using a plurality of gradually increasing pulse programming voltages in sequence, and each programming process may include a programming operation and a subsequent verification operation. During t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C16/34G11C16/10
CPCG11C16/3481G11C16/10
Inventor 张超吴真用李海波
Owner YANGTZE MEMORY TECH CO LTD
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