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Method and structure for annealing giant magnetoresistance sensor

A resistance and magnetic field technology, applied in the field of magnetoresistive sensors, can solve the problems of low precision and low efficiency, and achieve the effect of overcoming low precision and realizing industrial mass production.

Pending Publication Date: 2021-02-02
甘肃省科学院传感技术研究所
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Problems solved by technology

[0014] It can be seen that both the local laser annealing process and the multi-step photolithography process have the disadvantages of low precision and low efficiency, especially difficult to achieve in industrial mass production.

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  • Method and structure for annealing giant magnetoresistance sensor
  • Method and structure for annealing giant magnetoresistance sensor
  • Method and structure for annealing giant magnetoresistance sensor

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Embodiment Construction

[0058] The invention discloses an annealing method and mechanism for making the pinned layer of the MR resistor in the MR resistor have different magnetization directions. In particular, the pinned layers of adjacent MR resistors have completely opposite magnetization directions. In one example, the annealed MR resistors can be assembled into a Wheatstone full bridge. This MR resistance structure can be applied in any magnetoresistance, such as GMR (giant magnetoresistance) and TMR (tunneling magnetoresistance).

[0059] as above reference image 3 As described in , an MR Wheatstone full-bridge sensor usually requires four MR resistive structures, where each MR structure behaves as a magnetoresistance, such as GMR or TMR. Each MR magnetoresistor in a Wheatstone full bridge is capable of varying with the magnetic field being measured (the magnetic field has been sensed or tested). Adjacent magnetoresistors have opposite M p direction. Many times, MR sensors are fabricated ...

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Abstract

The invention discloses a method and a structure for annealing a giant magnetoresistance sensor. The method comprises the following steps: preparing an MR structure consisting of two ferromagnetic layers and a middle isolation layer on a substrate; one ferromagnetic layer of the MR structure is a pinned layer, and the magnetization direction of the ferromagnetic layer is fixed in subsequent operation. After an insulating layer is deposited on the MR structure, a metal layer is deposited on the insulating layer. The metal layer is photoetched into a thermal resistor. Under an external magneticfield, annealing is performed on the MR structure through the thermal resistor. After annealing is completed, the insulating layer and the thermal resistor are removed. The method overcomes the defects of low precision and low efficiency of the existing method, and realizes industrial batch production.

Description

technical field [0001] The invention relates to a magnetoresistance sensor, in particular to a giant magnetoresistance sensor and a tunneling magnetoresistance sensor with an integrated annealing structure. Background technique [0002] Magnetoresistive (MR) sensors such as giant magnetoresistance (GMR, Giant MagnetoResistance) sensors and tunneling magnetoresistance (TMR, Tunneling MagnetoResistance) sensors are widely used and are currently the most promising magnetoresistance sensors. A typical magnetoresistive sensor core structure consists of a "sandwich" structure consisting of two ferromagnetic layers sandwiching a non-ferromagnetic layer. Such as figure 1 As shown, the GMR sensor (10) comprises ferromagnetic layers (first ferromagnetic layer 12 and second ferromagnetic layer 16) with an intermediate non-ferromagnetic layer (14). The main component of the ferromagnetic layer can be NiFe, CoFe or other suitable magnetic materials. The non-ferromagnetic layer (14) is...

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Application Information

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IPC IPC(8): G01R33/09G01R33/00
CPCG01R33/093G01R33/0052
Inventor 宋玉哲韩根亮张彪高晓平
Owner 甘肃省科学院传感技术研究所
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