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Three-layer mesoporous hollow silicon dioxide fluorine-containing polybenzobisoxazole composite film as well as preparation method and application thereof

A technology of hollow silica and polybenzobisoxazole, which is applied in chemical instruments and methods, silicon compounds, inorganic chemistry, etc., can solve the problem of poor controllability of pore structure, reduction of material mechanical properties, uniformity of film formation, and pore closure sexual problems

Active Publication Date: 2021-02-05
EAST CHINA UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the controllability of the pore structure is poor, the formed pores are not well sealed, and problems such as stress concentration, collapse and agglomeration, and metal ion penetration are prone to occur, which reduces the mechanical properties of the material and the uniformity of film formation.

Method used

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  • Three-layer mesoporous hollow silicon dioxide fluorine-containing polybenzobisoxazole composite film as well as preparation method and application thereof
  • Three-layer mesoporous hollow silicon dioxide fluorine-containing polybenzobisoxazole composite film as well as preparation method and application thereof

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[0035] The present invention also provides a method for preparing the three-layer mesoporous hollow silica-fluorine-containing polybenzobisoxazole composite film described in the above technical solution, comprising the following steps:

[0036] Mix aminated three-layer mesoporous hollow silica spheres, 2,2-bis(3-amino-4-hydroxyphenyl)-hexafluoropropane, terephthalic acid, polyphosphoric acid and stannous chloride, After the in-situ polymerization reaction occurs, the water in the product is removed to obtain the first intermediate product system;

[0037] After the first intermediate product system is heat-treated, a film is formed to obtain the three-layer mesoporous hollow silica-fluorine-containing polybenzobisoxazole composite film.

[0038] In the present invention, unless otherwise specified, all raw materials are commercially available products well known to those skilled in the art.

[0039]The present invention combines aminated three-layer mesoporous hollow silica ...

Embodiment 1

[0077] as per figure 1 The flow chart shown prepares three layers of mesoporous hollow silica-fluorine-containing polybenzobisoxazole composite film:

[0078] Under the conditions of room temperature and stirring, mix 76g of absolute ethanol, 150g of deionized water, 2g of ammonia water with a mass concentration of 28% and 0.32g of cetyltrimethylammonium bromide, heat to 35°C, add 0.25g tetraethyl silicate and 0.25g 1,2-bis(triethoxysilane)ethane, after 18 hours of continuous reaction; add 0.25g tetraethyl silicate and 0.25g 1,2-bis(triethoxysilane) Silane) ethane, continue to react for 18h, finally add 0.25g tetraethyl silicate and 0.25g 1,2-bis(triethoxysilane)ethane, continue to react for 18h, cool to room temperature, centrifuge (6000r / min ), washed with absolute ethanol, and dried at room temperature to obtain three layers of solid silica microspheres;

[0079] Mix 1g of three-layer solid silica microspheres with 160g of deionized water, disperse under ultrasonic condit...

Embodiment 2

[0084] as per figure 1 The flow chart shown prepares three layers of mesoporous hollow silica-fluorine-containing polybenzobisoxazole composite film:

[0085] Under the conditions of room temperature and stirring, mix 76g of absolute ethanol, 150g of deionized water, 2g of ammonia water with a mass concentration of 28% and 0.32g of cetyltrimethylammonium bromide, heat to 35°C, add 0.25g tetraethyl silicate and 0.25g 1,2-bis(triethoxysilane)ethane, after 24 hours of continuous reaction; add 0.25g tetraethyl silicate and 0.25g 1,2-bis(triethoxysilane) Silane) ethane, continue to react for 24h, finally add 0.25g tetraethyl silicate and 0.25g 1,2-bis(triethoxysilane)ethane, continue to react for 24h, cool to room temperature, centrifuge (7000r / min ), washed with absolute ethanol, and dried at room temperature to obtain three layers of solid silica microspheres;

[0086] Mix 1g of three-layer solid silica microspheres with 160g of deionized water, disperse under ultrasonic condit...

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Abstract

The invention relates to the technical field of electronic materials, in particular to a three-layer mesoporous hollow silicon dioxide fluorine-containing polybenzobisoxazole composite film as well asa preparation method and application thereof. The material of the three-layer mesoporous hollow silicon dioxide fluorine-containing polybenzobisoxazole composite film provided by the invention comprises a fluorine-containing polybenzobisoxazole matrix and aminated three-layer mesoporous hollow silicon dioxide spheres, wherein the aminated three-layer mesoporous hollow silicon dioxide spheres aredispersed in the fluorine-containing polybenzobisoxazole matrix; the mass ratio of the aminated three-layer mesoporous hollow silicon dioxide spheres to the fluorine-containing polybenzobisoxazole matrix is (1-5): 100. The three-layer mesoporous hollow silicon dioxide fluorine-containing polybenzobisoxazole composite film has the advantages of excellent heat resistance and lower dielectric constant.

Description

technical field [0001] The invention relates to the technical field of electronic materials, in particular to a three-layer mesoporous hollow silica-fluorine-containing polybenzobisoxazole composite film and its preparation method and application. Background technique [0002] With the rapid development of the electronic information industry and the stimulation of the new demands of the 5G wireless technology revolution, the integration of VLSI devices has increased, and the size of components has developed to deep submicron. When the size of components is gradually reduced, the capacitance between wires, layer capacitance and wire resistance will increase, so that the signal delay caused by wire resistance and capacitance will increase, which will limit the high-speed performance of components. Generally speaking, the square of the dielectric constant is inversely proportional to the propagation speed of the signal. Therefore, in order not to generate crosstalk, the circuit...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C08L79/04C08K9/06C08K7/26C08J5/18H01L23/29
CPCC08J5/18H01L23/293C08J2379/04C08K9/06C08K7/26C01B33/148C08K3/36C08K5/544C08L79/04C01P2004/34C01P2006/16C08J2339/00C08K7/18C08K9/04
Inventor 庄启昕张哲刘小云徐健汪文涛吴泽阳吴晓晗李丽慧
Owner EAST CHINA UNIV OF SCI & TECH