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Metrology method, apparatus and computer program

A machine learning and target technology, applied in computing, computing models, optomechanical devices, etc.

Pending Publication Date: 2021-02-09
ASML NETHERLANDS BV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, this relationship is only linear for ideal targets, for which the only target asymmetries are the overlap being measured and any deliberate bias

Method used

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  • Metrology method, apparatus and computer program
  • Metrology method, apparatus and computer program
  • Metrology method, apparatus and computer program

Examples

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Embodiment Construction

[0025] Before describing embodiments of the invention in detail, it is instructive to present an exemplary environment in which embodiments of the invention may be practiced.

[0026] figure 1 A lithographic apparatus LA is schematically depicted. The apparatus comprises: an illumination optics (illuminator) IL configured to condition a radiation beam B (e.g. UV radiation or DUV radiation); a patterning device support or support structure (e.g. a mask table) MT configured to support patterning A device (e.g. mask) MA and connected to a first positioner PM configured to accurately position the patterning device according to certain parameters; a substrate table (e.g. wafer table) WT configured to hold the substrate a substrate (e.g. a resist-coated wafer) W and is connected to a second positioner PW configured to accurately position the substrate according to certain parameters; and a projection optics system (e.g. a refractive type projection lens A system) PS configured to ...

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Abstract

Disclosed is a method of, and associated metrology apparatus for, determining a characteristic of a target on a substrate. The method comprises obtaining a plurality of intensity asymmetry measurements, each intensity asymmetry measurement relating to a target formed on the substrate and determining a sensitivity coefficient corresponding to each target, from the plurality of intensity asymmetry measurements. Using these sensitivity coefficients a representative sensitivity coefficient is determined for said plurality of targets or a subset greater than one thereof. The characteristic of the target can then be determined using the representative sensitivity coefficient. (Fig. 8).

Description

[0001] background [0002] Cross References to Related Applications [0003] This application claims priority from European application 18174831.0 filed on 29 May 2018, which is hereby incorporated by reference in its entirety. technical field [0004] The present invention relates to methods and apparatus for metrology usable, for example, in the fabrication of devices by lithography, and to methods of fabricating devices using lithography. Background technique [0005] A lithographic apparatus is a machine that applies a desired pattern to a substrate, usually to a target portion of the substrate. A lithographic apparatus can be used, for example, in the manufacture of integrated circuits (ICs). In this case, a patterning device, alternatively referred to as a mask or reticle, may be used to generate the circuit pattern to be formed on the individual layers of the IC. The pattern can be transferred onto a target portion (eg comprising part of a die, one or several dies)...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/20
CPCG03F7/706G03F7/70633G01B11/272G06N20/00G01B2210/56G01B11/14
Inventor 阿尔伯托·达科斯特阿萨法劳M·哈伊赫曼达
Owner ASML NETHERLANDS BV
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