Electrostatic chuck system and semiconductor processing equipment

Abstract

The invention provides an electrostatic chuck system and semiconductor processing equipment. The electrostatic chuck system comprises a base, a control module, an insulating layer, a plurality of gating modules and at least one compensation capacitor. The insulating layer is arranged on the base, a radio frequency feed-in layer and a radio frequency adjusting layer located on the side, away from the base, of the radio frequency feed-in layer are arranged in the insulating layer, the radio frequency feed-in layer and the radio frequency adjusting layer are insulated and arranged in a spaced mode, and the radio frequency feed-in layer is used for being connected with a radio frequency power source for providing radio frequency signals. The radio frequency adjusting layer comprises a plurality of adjusting parts which are insulated and spaced from one another; the adjusting part and the radio frequency feed-in layer are both conductive; the plurality of gating modules are in one-to-one correspondence with the plurality of adjusting parts, each adjusting part is connected with the first end of the corresponding gating module, the second end of each gating module is connected with one end of the compensation capacitor, and the other end of the compensation capacitor is connected with the grounding end; the control module is used for controlling connection or disconnection of the first end and the second end of the gating module. According to the invention, the uniformity of etching can be improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor processing, in particular to an electrostatic chuck system and semiconductor processing equipment. Background technique [0002] Electrostatic Chuck (ESC) is a device that uses electrostatic adsorption to fix the substrate to be processed, while controlling the temperature of the substrate and providing it with a DC bias. [0003] figure 1 It is a structural schematic diagram of an electrostatic chuck in an example, such as figure 1 As shown, the electrostatic chuck in this example includes: a base 100 , a heating layer 200 and an insulating layer 300 , a bias radio frequency (Bias Radio Frequency) mechanism BRF. The base 100 is used to support and protect the heating layer 200 and the insulating layer 300 mounted thereon, and the base 100 is provided with a cooling channel 110 for cooling. The output end of the bias radio frequency mechanism BRF is arranged inside the susceptor 100, and ...

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Problems solved by technology

[0005] But when figure 1 In the electrostatic chuck shown, after the bias radio frequency mechanism BRF outputs the bias radio frequency signal, the bias radio frequency signal needs to pass through the heating layer 200 and the insulating layer 300 before reaching the top of the substrate 400 to be processed, because the heating layer 200 and the insulating layer 300 The insulating layer 300 is bonded by an adhesive. In actual processing, it is difficult to ensure the uniformity of the thickness of the adhesive. Therefore, after the radio frequency signal passes through the heating layer 200 and the insulating layer 300, it is difficult to pass through the substrate 400 to be processed. A uniform electric field is formed, which makes it difficult to maintain consistent etching rates everywhere above the substrate 400 to be processed, resulting in poor etching uniformity

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