Gallium Nitride Integrated Field Effect Transistor with Dual Operation Mode and Preparation Method Thereof

A double-working mode, gallium nitride technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc.

Active Publication Date: 2022-04-12
FUDAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, GaN devices with the above characteristics require the development of special device processes, which have not been reported yet.

Method used

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  • Gallium Nitride Integrated Field Effect Transistor with Dual Operation Mode and Preparation Method Thereof
  • Gallium Nitride Integrated Field Effect Transistor with Dual Operation Mode and Preparation Method Thereof
  • Gallium Nitride Integrated Field Effect Transistor with Dual Operation Mode and Preparation Method Thereof

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0049] A GaN integrated field-effect crystal with dual working modes, the preparation steps of which are as follows:

[0050] (1) A 100 nm AlN non-nucleation layer, a 1 μm non-doped AlGaN buffer layer, and a 1 μm carbon-doped high-resistance layer were sequentially grown on a 2inch Si (111) substrate by metal-organic chemical vapor deposition (MOCVD). GaN layer, 200 nm undoped GaN channel layer and 20 nm AlGaN barrier layer. The schematic diagram of AlGaN / GaN heterojunction epitaxial structure is shown in Fig. figure 1 shown.

[0051] (2) On the surface of the wafer described in step (1), 100nm SiO was grown by plasma-enhanced chemical vapor deposition (PECVD) 2 The thin film is used as a mask layer for selective epitaxy, and the obtained wafer structure is as follows figure 2 shown;

[0052] (3) On the surface of the wafer obtained in step (2), expose the region of selective growth by ultraviolet lithography, and then use a commercially available BOE solution (HF:NH 4 F...

Embodiment 2

[0063] A GaN integrated field-effect crystal with dual working modes, the preparation steps of which are as follows:

[0064] (1) A 150 nm AlN non-nucleation layer, a 1.5 μm undoped AlGaN buffer layer, and a 2 μm carbon-doped high-resistance layer were sequentially grown on a 2inch Si (111) substrate by metal organic chemical vapor deposition (MOCVD). GaN layer, 250 nm undoped GaN channel layer and 25 nm AlGaN barrier layer.

[0065] (2) On the surface of the wafer obtained in step (1), 150nm SiO was grown by plasma-enhanced chemical vapor deposition (PECVD) 2 The thin film is used as a mask layer for selective epitaxy;

[0066] (3) On the surface of the wafer obtained in step (2), expose the region of selective growth by ultraviolet lithography, and then use a commercially available BOE solution (HF:NH 4 F (volume ratio 1:6) wet-etched the exposed area for 75 s to remove SiO 2 The mask layer exposes the AlGaN / GaN epitaxial wafer;

[0067] (4) For the wafer obtained in ste...

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Abstract

The invention discloses a gallium nitride integrated field effect transistor with double working modes and a preparation method thereof. The method of selective epitaxial growth is used to grow p-GaN on the sidewall of the AlGaN / GaN heterojunction to form a p-GaN / 2DEG junction. Prepare p-type and n-type ohmic contact electrodes on the p-GaN and AlGaN / GaN heterojunctions, respectively, and prepare insulated gate electrodes on the AlGaN / GaN heterojunction side of the p-GaN / 2DEG junction. The GaN integrated field effect transistor of the present invention has enhancement mode and depletion mode working mode at the same time, adopts the selective epitaxy process based on AlGaN / GaN heterojunction to avoid the preparation of interconnection metal, improves the functionality of the integrated device, and reduces the cost of the integrated device Parasitic effects have broad application prospects in the field of high-performance GaN power devices and logic devices.

Description

technical field [0001] The invention relates to a field-effect transistor in the field of semiconductor technology, in particular to a gallium nitride integrated field-effect transistor with dual working modes and a preparation method thereof. Background technique [0002] Compared with traditional semiconductor silicon (Si) materials, gallium nitride (GaN) materials have higher carrier mobility, higher breakdown field strength and higher operating temperature, plus AlGaN / GaN heterojunction The interface can generate high-concentration, high-mobility two-dimensional electron gas (2DEG), and GaN has become a representative of the third-generation semiconductor material. GaN-based devices are considered to be a strong alternative to Si-based devices. In recent years, in order to improve device performance at the system level, GaN-based devices have gradually shown a trend of developing from discrete devices to integrated devices. [0003] There are two main types of fabricat...

Claims

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Application Information

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Patent Type & AuthorityPatents(China)
IPC IPC(8): H01L29/778H01L29/06H01L21/335
CPCH01L29/7789H01L29/0603H01L29/0684H01L29/66462
Inventor卢红亮陈丁波张卫
OwnerFUDAN UNIV