A kind of preparation method of uv LED and UV LED
A multi-quantum well and flow technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of difficult UVLED core luminous color difference, difficult to distinguish UVLED core particles, inconsistent stability and uniformity, etc., and achieve the dominant wavelength. The effect of controllable lumen intensity, controllable lumen intensity and adjustable main wavelength
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Embodiment 1
[0067] The UV LED of this embodiment and figure 2 Basically the same, the specific preparation process is as follows:
[0068] 1) At 200 Torr, raise the temperature of the MOCVD reaction chamber to 1080°C, and treat the (002) plane sapphire substrate 10 at high temperature for 5 minutes; cool down to 530°C for nitriding treatment, and respectively use TEGa, TMIn, TMAl, NH 3 As gallium source, indium source, aluminum source, nitrogen source, SiH 4 is an n-type dopant, Cp 2 Mg is the p-type dopant, with N 2 As the carrier gas, send various gas sources into the MOCVD reaction chamber; continue to grow a GaN layer with a thickness of 35nm at 530°C as the low-temperature buffer layer 11; raise the temperature to 1080°C, and grow a GaN layer with a thickness of 2.0μm as the unintentional Doped layer 12; lower the temperature to 1070°C, grow a Si-doped n-GaN layer with a thickness of 2.0 μm as the n-type doped layer 13, wherein the n-doped concentration is 5E+18atom / cm 3 ; lower...
Embodiment 2
[0076] The UV LED structure of the present embodiment and figure 2 Basically the same, the treatment of the substrate 10 in the specific preparation process, the low-temperature buffer layer 11, the unintentionally doped layer 12, the n-type doped layer 13, the quantum well transition layer 14, the p-type doped layer 16, and the metal contact layer 17 The growth method is consistent with that of Example 1, and will not be repeated here. Different from embodiment 1, the parameters in step 2) to step 6) are adjusted to some extent, as follows:
[0077] 2) Raise the temperature of the reaction chamber to 900°C, control the flow of TEGa to 250 sccm, the flow of TMAl to 100 sccm, NH 3 The flow rate is 50sl, and the first multi-quantum well unit barrier layer 15b1 with a thickness of 12nm is grown on the quantum well transition layer 14; the temperature is lowered to 820°C, and the flow rate of TEGa is controlled to 200 sccm, and the flow rate of TMIn to 120 sccm, NH 3 The flow r...
Embodiment 3
[0083] The UV LED structure of the present embodiment and figure 2 Basically the same, the specific preparation process differs from that of Example 2 in that: step 5) is omitted, only one second multi-quantum well unit is grown, and the rest of the steps are the same, and will not be repeated here.
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