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Method for repairing flash memory

A flash memory and storage block technology, applied in the circuit field, can solve the problems of increased testing and judgment costs, and achieve the effect of reducing judgment costs

Pending Publication Date: 2021-03-26
PUYA SEMICON SHANGHAI CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Compared with the first method, using an external machine can reduce the design and area cost of the flash memory chip, but the cost of testing and judgment will increase

Method used

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  • Method for repairing flash memory
  • Method for repairing flash memory
  • Method for repairing flash memory

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Embodiment Construction

[0027] A method for repairing a flash memory proposed by the present invention will be described in further detail below in conjunction with the accompanying drawings and specific embodiments. The advantages and features of the present invention will become clearer from the following description. It should be noted that the drawings are in a very simplified form and all use imprecise scales, which are only used to facilitate and clearly assist the purpose of illustrating the embodiments of the present invention. In order to make the objects, features and advantages of the present invention more comprehensible, please refer to the accompanying drawings. It should be noted that the structures, proportions, sizes, etc. shown in the drawings attached to this specification are only used to match the content disclosed in the specification, for those who are familiar with this technology to understand and read, and are not used to limit the implementation of the present invention. c...

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Abstract

The invention discloses a method for repairing a flash memory, which comprises the following steps of: entering a redundancy judgment and analysis mode, and selecting data to be written; correspondingly writing the data into a to-be-analyzed storage block in a flash memory, and reading the data from the to-be-analyzed storage block from an initial flash memory address; correspondingly comparing the read data with the to-be-written data, and counting the number of errors of the data; and comparing the number of errors with the number of redundancy, and if the number of errors is greater than the number of redundancy or flash memory addresses and other information in an available state and the number of errors which are not matched with used redundancy is greater than the number of remainingunused redundancy, determining that the flash memory cannot be repaired by adopting redundancy. According to the invention, the cost of redundancy judgment is reduced.

Description

technical field [0001] The invention relates to the technical field of circuits, in particular to a method for repairing a flash memory. Background technique [0002] Flash Memory (Flash Memory) is a non-volatile (Non-Volatile) memory that can still maintain the stored data information in the case of power failure. Flash memory does not require a special high voltage during electrical erasure and reprogramming, and has the characteristics of low manufacturing cost and high storage density, making it the mainstream of non-volatile semiconductor storage technology. Among them, dual split gate flash memory is one of the main non-volatile memories on the market because of its high transmission efficiency and high cost-effectiveness in a small capacity of 1-4MB. [0003] In the design of the redundancy protection circuit of the flash memory, it is necessary to determine which data error conditions can be redundantly repaired, so as to improve the yield of the flash memory. For ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C29/44G11C29/00
CPCG11C29/44G11C29/78
Inventor 陈鹏汪齐方
Owner PUYA SEMICON SHANGHAI CO LTD
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