Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Tantalum nitride thin film resistor and preparation method thereof

A thin film resistor, tantalum nitride technology, applied in thin film resistors, resistor manufacturing, resistors, etc., can solve the problems of resistance fluctuation of tantalum nitride thin film resistors, achieve high stability and consistency, and improve resistance stability performance, good resistance stability

Active Publication Date: 2022-01-04
浙江集迈科微电子有限公司
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In view of the above-mentioned shortcomings of the prior art, the purpose of the present invention is to provide a tantalum nitride thin film resistor and its preparation method, which is used to solve the problem that the resistance value of the tantalum nitride thin film resistors prepared in the prior art fluctuates greatly

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Tantalum nitride thin film resistor and preparation method thereof
  • Tantalum nitride thin film resistor and preparation method thereof
  • Tantalum nitride thin film resistor and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0043] refer to figure 1 , this embodiment provides a method for preparing a tantalum nitride thin film resistor. In the same machine, a composite structure of sequentially stacked tantalum nitride layers and passivation layers is formed by using the magnetron sputtering method, so that through the passivation The tantalum nitride layer can protect the tantalum nitride layer and prevent the tantalum nitride layer from being in contact with the external environment, so that the tantalum nitride layer has good resistance stability.

[0044] refer to Figure 2 ~ Figure 6b , the preparation process and structure of the tantalum nitride thin film resistor will be further described below in conjunction with the drawings and specific embodiments.

[0045] First, see figure 2 , providing a substrate 100 , and forming a patterned mask layer 200 on the substrate 100 to expose the substrate 100 .

[0046] Specifically, the substrate 100 may include one of a silicon layer, a silicon o...

Embodiment 2

[0059] refer to Figure 7 , this embodiment also provides another tantalum nitride thin film resistor and its preparation method. The main difference between this embodiment and Embodiment 1 is that the passivation layer in this embodiment adopts a conductive layer 312 with conductivity . Wherein, for the specific preparation method and structure of the tantalum nitride thin film resistor, please refer to Embodiment 1.

[0060] In this embodiment, the tantalum nitride thin film resistor includes a substrate 110, a composite structure 310, a protective layer 410, and an electrode 510, wherein the composite structure 310 is located on the substrate 110, and the composite structure 310 includes sequentially stacked A tantalum nitride layer 311 and a conductive layer 312, wherein the tantalum nitride layer 311 is in contact with the substrate 110, the conductive layer 312 covers the tantalum nitride layer 311; the protective layer 410 covers the The substrate 110 and the composi...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention provides a tantalum nitride thin film resistor and a preparation method thereof. In the same machine, a composite structure of sequentially stacked tantalum nitride layers and passivation layers is formed by using the magnetron sputtering method, so that the passivation layer can The tantalum nitride layer is protected to prevent the tantalum nitride layer from contacting the external environment, so that the tantalum nitride layer has good resistance stability; further, when the passivation layer is a conductive layer, the passivation layer can be used to achieve The interconnection between the tantalum nitride layer and the electrode, so that in the whole preparation process, the coverage of the tantalum nitride layer by the passivation layer can be realized, so as to effectively realize the protection of the tantalum nitride layer, and further improve the tantalum nitride layer. Excellent resistance stability in order to prepare highly stable and consistent tantalum nitride thin film resistors.

Description

technical field [0001] The invention belongs to the field of semiconductors, and relates to a tantalum nitride film resistor and a preparation method thereof. Background technique [0002] As one of the most widely used passive devices in integrated circuits, thin film resistors mainly perform functions such as power decoupling, device operating point bias, network matching and inter-level coupling in the circuit. Commonly used thin film resistor materials are tantalum nitride (TaN x ), nickel-chromium alloy (NiCr), silicon nitride (SiN x ), among which tantalum nitride thin film resistor is a kind of thin film resistor material with long-term stability and precision in high temperature and humid environment due to its small size, high precision, low noise, low temperature coefficient and good reliability. Most widely used in circuit manufacturing. [0003] In the actual manufacturing process, in order to ensure the stability of the resistance value of the tantalum nitrid...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01C7/00H01C17/12H01C17/075
CPCH01C17/075H01C17/12H01C7/006
Inventor 邹鹏辉马飞莫炯炯蔡全福魏婷婷
Owner 浙江集迈科微电子有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com