Bi-directional breakdown silicon controlled rectifiers

Abstract

The present disclosure relates to semiconductor structures and, more particularly, to bi-directional silicon controlled rectifiers (SCRs) and methods of manufacture. The structure includes: a plurality of diffusion regions; a plurality of p-type (P+) wells adjacent to the diffusion regions, wherein the P+ wells are directly connected; and a plurality of n-type (N+) wells adjacent to the P+ wells.

Description

technical field [0001] The present disclosure relates to semiconductor structures, and more particularly to bidirectional breakdown silicon-controlled rectifiers (SCRs) and methods of fabrication. Background technique [0002] As semiconductor devices continue to be scaled down (eg, shrunk), the desired spacing (ie, pitch) between features is also getting smaller. To this end, at smaller technology nodes, devices become more susceptible to external stresses. As such, it becomes increasingly difficult to fabricate devices with specific features that warrant robust chips due to critical dimension (CD) scaling and processing capabilities, as well as the materials used to fabricate such structures. [0003] Fifth generation (5G) network technology implements switches used to switch between positive and negative (+ / -) voltages within the network. External stressors such as electrostatic discharge (ESD) can cause problems with switches. Therefore, these switches require protect...

AI Technical Summary

Problems solved by technology

The problem with this conventional solution is that it takes up a large area which may not be available

Also, these conventional devices do not provide symmetrical protection for the (+ / -) voltage window

This is because conventional devices have p-type (P+) wells isolated from each other, resulting in inconsistent trigger voltages due to the isolated P+ wells being at different potentials

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