Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

Wafer defect identification method and device

A recognition method and recognition device technology, applied in image data processing, instruments, calculations, etc., can solve problems such as complex manufacturing process and wafer defect loss, and achieve the effect of improving defect recognition efficiency

Pending Publication Date: 2021-04-13
HUA HONG SEMICON WUXI LTD
View PDF0 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] As the size of semiconductor manufacturing technology continues to shrink, the manufacturing process is becoming more and more complex. The manufacturing and packaging of wafers is a rather long and complicated process involving hundreds of steps. These steps cannot be performed perfectly every time, pollution and material variations will be incorporated into the process causing wafer defect losses

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Wafer defect identification method and device
  • Wafer defect identification method and device
  • Wafer defect identification method and device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0040] The identification method of wafer defect described in the present invention comprises:

[0041] A wafer defect image is acquired, and the wafer defect image includes a grayscale image.

[0042] performing weak signal discrimination processing on the wafer defect image to obtain a processed wafer defect image; the weak signal discrimination processing is used to distinguish the wafer defect in the wafer defect image from the background.

[0043] Perform positioning and frame selection on the wafer defects, count the wafer defects selected by the positioning and frame, and obtain the number of wafer defects in the wafer defect image.

[0044] For specific times, refer to figure 2 and image 3 shown, including the following steps:

[0045] First obtain the original image of the wafer defect image, such as a grayscale image. The RGB three-channel values ​​of the same pixel in the original image are the same, presenting a grayscale image. image 3 The value of the thr...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a wafer defect identification method and device. The method comprises the steps that an original image of a wafer defect image is acquired; performing binarization processing on the original images of all the acquired wafer defect images; continuously carrying out corrosion treatment on the original image; performing frame selection counting on the processed original image; and outputting the results. According to the method, the defect pictures are preprocessed, and then the defect number is automatically selected and calibrated online and classified, so that the defect recognition efficiency is improved.

Description

technical field [0001] The invention relates to the field of semiconductor device manufacturing, in particular to the field of failure analysis, in particular to a wafer defect identification method. The present invention also relates to an identification device for said wafer defect. Background technique [0002] As the size of semiconductor manufacturing technology continues to shrink, the manufacturing process is becoming more and more complex. The manufacturing and packaging of wafers is a rather long and complicated process involving hundreds of steps. These steps cannot be performed perfectly every time, pollution And material variations will be incorporated into the process causing wafer defect losses. Maintaining and improving process and product yield is critical to the semiconductor industry. In the wafer manufacturing process, defects have become the key to restricting the improvement of yield. There are many kinds of wafer defects, such as short circuit, open ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G06T7/00G06T7/136G06T7/62G06T5/30
CPCG06T7/0002G06T7/136G06T7/62G06T5/30G06T2207/10004G06T2207/30148
Inventor 孟德旭李磊米琳
Owner HUA HONG SEMICON WUXI LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products