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Non-volatile memory and its voltage calibration method

A non-volatile, voltage calibration technology, applied in static memory, read-only memory, information storage, etc., can solve the problems of low precision and long calibration time

Active Publication Date: 2022-04-29
YANGTZE MEMORY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This method needs to read data multiple times to select an appropriate read voltage, and requires multiple interactions between the memory controller 100 and the non-volatile memory 200 to complete the calibration, which takes a long time and has low precision to perform the calibration

Method used

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  • Non-volatile memory and its voltage calibration method
  • Non-volatile memory and its voltage calibration method
  • Non-volatile memory and its voltage calibration method

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Embodiment Construction

[0040] For a better understanding of the application, various aspects of the application will be described in more detail with reference to the accompanying drawings. It should be understood that these detailed descriptions are descriptions of exemplary embodiments of the application only, and are not intended to limit the scope of the application in any way. Throughout the specification, the same reference numerals refer to the same elements. The expression "and / or" includes any and all combinations of one or more of the associated listed items.

[0041] In the drawings, the size, dimensions, and shapes of elements have been slightly adjusted for illustrative purposes. The drawings are examples only and are not strictly drawn to scale. As used herein, the words "approximately," "approximately," and similar words are used as words of approximation, not of degree, and are intended to describe measurements that would be recognized by those of ordinary skill in the art. Or inh...

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Abstract

The application discloses a voltage calibration method for a nonvolatile memory. A nonvolatile memory includes a plurality of storage units and an internal control circuit for controlling operations of the plurality of storage units. The method includes: writing the received data for calibrating the read voltage into the plurality of storage units by the internal control circuit; The target bit error rate is obtained from the data in a plurality of storage units, and the target voltage is sequentially selected from a plurality of voltages; and the minimum bit error rate among the plurality of bit error rates is determined by the internal control circuit A corresponding voltage is determined as a read voltage, wherein the target bit error rate is one of the plurality of bit error rates.

Description

technical field [0001] The present disclosure relates to a nonvolatile memory with a voltage calibration function and an operating method of the nonvolatile memory. Background technique [0002] Non-volatile semiconductor memory is widely used in cellular telephones, digital cameras, personal digital assistants, mobile computing devices, non-mobile computing devices, and other devices. Non-volatile memory retains data in the event of a sudden power loss or power-off. Examples of non-volatile memory include flash memory, read-only memory ROM, or electrically erasable programmable read-only EEPROM, among others. In order to further increase the bit density and reduce the cost of flash memory devices, three-dimensional (3D) NAND flash memory has been developed. [0003] 3D NAND memory stores data by shifting the threshold voltage of memory cells and reads data by using a predetermined read level. However, the threshold voltage of a memory cell may shift unintentionally, eg, ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G06F11/07G11C29/02G11C29/50G11C16/34
Inventor 周星周第廷黄雪青陈少波李萌
Owner YANGTZE MEMORY TECH CO LTD