Light emitting diode epitaxial wafer and preparation method thereof

Abstract

The invention discloses a light emitting diode epitaxial wafer and a preparation method thereof, and belongs to the field of light emitting diode manufacturing. A SiO2 adjusting layer is added between an n-type GaN layer and a multi-quantum well layer, the SiO2 adjusting layer comprises a plurality of SiO2 adjusting columns distributed on the surface of the n-type GaN layer at intervals, and the height of the SiO2 adjusting columns located at the circle center of the surface of the n-type GaN layer is set to be lower than that of the SiO2 adjusting columns located at the edge of the surface of the n-type GaN layer, so that in growth of multiple quantum wells, growth time difference is promoted to form between a region near the circle center of the surface of the n-type GaN layer and a region near the edge of the surface of the n-type GaN layer, a thickness difference formed between the region near the edge and the region near the circle center due to a temperature difference is counteracted, and the overall growth thickness of a multiple quantum well layer is more uniform, and thus, the light emitting uniformity of the light emitting diode is improved.

Description

technical field [0001] The invention relates to the field of light-emitting diode production, in particular to a light-emitting diode epitaxial wafer and a preparation method thereof. Background technique [0002] LED (English: Light Emitting Diode, Chinese: Light Emitting Diode), a light emitting diode is a semiconductor electronic component that can emit light. As an efficient, environmentally friendly and green new solid-state lighting source, it is being rapidly and widely used, such as traffic lights, car interior and exterior lights, urban landscape lighting, mobile phone backlight, etc. Improving the luminous efficiency of chips is the goal that LEDs are constantly pursuing. [0003] During the preparation of light-emitting diode epitaxial wafers, the substrate needs to be placed in the groove of the tray, the edge and bottom of the tray surface are heated and heated, and the reactive gas and reactive metal source are deposited on the upper surface of the substrate. ...

AI Technical Summary

Problems solved by technology

The n-type GaN layer, the multi-quantum well layer and the p-type GaN layer require a higher growth temperature, and at high temperatures, the distance between the edge of the surface of the substrate that is in direct contact with the heat source and the center of the substrate surface that requires heat transfer time During this period, temperature unevenness is prone to occur, which further leads to the rapid growth of the high-temperature region on the substrate, and the slow growth of the low-temperature region, resulting in a high degree of unevenness between the edge of the surface and the center of the surface of the final light-emitting diode epitaxial wafer. , affecting the luminous uniformity of the LED epitaxial wafer

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