Light-emitting diode epitaxial wafer and preparation method thereof

Abstract

The invention discloses a light-emitting diode epitaxial wafer and a preparation method thereof, belonging to the field of light-emitting diode production. Added SiO between the n-type GaN layer and the multi-quantum well layer 2 Regulation layer, SiO 2 The adjustment layer includes a plurality of SiO2 distributed at intervals on the surface of the n-type GaN layer 2 Adjusting the column, place the SiO at the center of the surface of the n-type GaN layer 2 Adjust the height of the pillars, all set to be lower than the edge of the SiO located on the surface of the n-type GaN layer 2 Adjusting the height of the column can promote the formation of a growth time difference between the area near the center of the surface of the n-type GaN layer and the area near the edge of the surface of the n-type GaN layer during the growth of the multi-quantum well, thereby offsetting the temperature difference near the edge. The difference in thickness formed between the area and the area near the center of the circle makes the thickness of the overall growth of the multi-quantum well layer more uniform, thereby improving the luminous uniformity of the light-emitting diode.

Description

Technical field [0001] The present invention relates to the field of light emitting diode, and more particularly to light emitting diode epitaxial sheets and preparation methods thereof. Background technique [0002] LED (English: Light Emitting Diode, Chinese: LED), LED is a semiconductor electronic component capable of illuminating. As an efficient, environmentally friendly, green new solid state lighting source, it is rapidly available, such as traffic signals, automotive inside and outside lights, urban landscape lighting, mobile backlight, etc., improved chip luminous efficiency is the continuous pursuit of LED. [0003] When the light-emitting diode epitaxial sheet is prepared, it is necessary to place the substrate within the recess of the tray, and the edge of the surface of the tray is heated to heat, the reaction gas is deposited on the surface of the substrate on the surface of the substrate, resulting in a substrate in turn. The upper N-type GaN layer, multi-quantum w...

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Problems solved by technology

The n-type GaN layer, the multi-quantum well layer and the p-type GaN layer require a higher growth temperature, and at high temperatures, the distance between the edge of the surface of the substrate that is in direct contact with the heat source and the center of the substrate surface that requires heat transfer time During this period, temperature unevenness is prone to occur, which further leads to the rapid growth of the high-temperature region on the substrate, and the slow growth of the low-temperature region, resulting in a high degree of unevenness between the edge of the surface and the center of the surface of the final light-emitting diode epitaxial wafer. , affecting the luminous uniformity of the LED epitaxial wafer

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