Preparation method of quantum dot device and quantum dot device

A quantum dot device and sample technology, applied in the field of quantum computing, can solve problems such as overlapping dielectric layers, noise, and weakening the field effect of control electrodes

Pending Publication Date: 2021-04-20
北京量子信息科学研究院
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  • Abstract
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Problems solved by technology

[0003] However, the traditional quantum dot device preparation method causes the problem that the dielectric layers overlap each other in the longitudinal direction between the injection electrode PG and the barrier electrode BG in the control electrode for regulating quantum dots.
At this time, the overlap of the dielectric layer between the injection electrode PG and the barrier electrode BG will weaken the field effect of the control electrode, increase the threshold voltage of the control electrode and the leakage between the electrodes, and introduce unnecessary noise at low temperature

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  • Preparation method of quantum dot device and quantum dot device
  • Preparation method of quantum dot device and quantum dot device
  • Preparation method of quantum dot device and quantum dot device

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Embodiment Construction

[0040] In order to facilitate the understanding of the present application, the present application will be described more fully below with reference to the relevant drawings. Embodiments of the application are given in the drawings. However, the present application can be embodied in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the disclosure of this application more thorough and comprehensive.

[0041] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the technical field to which this application belongs. The terms used herein in the specification of the application are only for the purpose of describing specific embodiments, and are not intended to limit the application.

[0042]It will be understood that when an element or layer is referred to as being "on," "adjacent," "conn...

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Abstract

The invention relates to a preparation method of a quantum dot device and the quantum dot device, when a plurality of injection electrode structures (PG) and a plurality of barrier electrode structures (BG) are prepared, one exposure step is carried out, compared with the traditional preparation method, the exposure steps are reduced, and the preparation cost can be reduced. The plurality of injection electrode structures (PG) and the plurality of barrier electrode structures (BG) are arranged on a work function structure at intervals and are mutually independent. Second sub dielectric layers are prepared on the side wall surfaces of the plurality of injection electrode structures (PG) and the side wall surfaces of the plurality of barrier electrode structures (BG). At the moment, the problem that the dielectric layers are mutually overlapped in the longitudinal direction does not exist between the plurality of injection electrode structures (PG) and the plurality of barrier electrode structures (BG), and problems that the field effect of the electrodes is weakened, the threshold voltage of the electrodes is increased, the electric leakage between the electrodes is increased, unnecessary noise is introduced and the like because of mutual overlapping of the dielectric layers are solved.

Description

technical field [0001] The present application relates to the technical field of quantum computing, in particular to a preparation method of a quantum dot device and the quantum dot device. Background technique [0002] Quantum dot devices are widely used in the fields of light and electricity, such as quantum dot lasers, ideal single photon sources, quantum dot memories, and qubit quantum computers. They are devices with great potential application prospects. Among them, the traditional quantum dot device preparation method is to perform micro-nano processing on a thin film sample with two-dimensional electron gas characteristics, and prepare three kinds of control electrodes for applying voltage (for example: depletion electrode (Deplete gate, DG), Injection electrodes (Plunger gate, PG) and barrier electrodes (Barrier gate, BG)) are used for regulation and testing of quantum dots. [0003] However, in the traditional preparation method of quantum dot devices, there is a ...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/56H01L51/50
Inventor 张钦彤裴天陈剑豪
Owner 北京量子信息科学研究院
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