Bit line switch circuit of NAND flash memory

A switch circuit and bit line technology, which is applied in the field of bit line switch circuits of NAND flash memory, can solve the problems of reduced integration

Pending Publication Date: 2021-05-14
深圳市优黎泰克科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0019] figure 1 A bit line switch circuit 100 for a pair of bit lines is shown, but in order to implement the bit line switch circuit 100 in the entire flash memory, it is necessary to provide a sufficient area, so there is a problem that the degree of integration decreases

Method used

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  • Bit line switch circuit of NAND flash memory
  • Bit line switch circuit of NAND flash memory

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Embodiment Construction

[0032] Hereinafter, the bit line switch circuit of the NAND flash memory of the present invention will be described in detail with reference to the accompanying drawings.

[0033] The embodiments provided by the present invention are to more fully describe the present invention to those skilled in the art, and the embodiments described below can be changed into other various forms, and the scope of the present invention is not limited to the following embodiments. Rather, these embodiments are provided to make the contents of the present invention more thorough and complete, and to fully convey the concept of the present invention to those skilled in the art.

[0034] The terminology used in the specification is for the purpose of describing particular embodiments only and is not intended to limit the invention. As used in this specification, the singular includes the plural unless an exception is clearly stated. In addition, "comprise" and / or "comprising" used in this specif...

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Abstract

A bit line switch circuit of a NAND flash memory includes: a selection section including a low voltage transistor to select a bit line when a read mode and a discharge are performed; and a cutoff portion located between the selection portion and the cell array to select one of a pair of bit lines to cut off the output terminal from being affected by a high voltage applied to the bit line in an erase mode.

Description

technical field [0001] The invention relates to a bit line switch circuit of NAND flash memory, in particular to a bit line switch circuit of NAND flash memory which can improve integration by reducing the number of high-voltage components. Background technique [0002] In general, flash memory is a type of non-volatile memory that retains data even when power is removed. Because of its small size and light weight, compared with branched media or optical media, it has stronger resistance to mechanical shock, direct light, high temperature and humidity, so it is often used as a portable storage device. [0003] Flash memory is broadly classified into NAND type flash memory and NOR type flash memory. Address lines are provided in units of blocks in NAND flash memory, and address lines are provided in units of cells in NOR flash memory. [0004] Therefore, although the NAND flash memory has the disadvantage of only being able to access blocks, it has the advantage of being ab...

Claims

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Application Information

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Patent Type & AuthorityApplications(China)
IPC IPC(8): G11C16/14
CPCG11C16/14G11C16/24G11C16/26
Inventor郑然云孙成思
Owner深圳市优黎泰克科技有限公司