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A power mosfet with miller clamp function

A Miller clamp and functional technology, applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of device mis-opening, upper and lower tubes through short circuit, device burnout, etc., and achieves low response delay, fast response speed, protection free effect on damage

Active Publication Date: 2021-07-09
NOVUS SEMICON CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, the higher switching speed brings about the increase of dv / dt, especially in the bridge circuit, the rapid change of the Switch node voltage will cause the Miller capacitance in the power MOSFET to charge and discharge rapidly, and the charge and discharge current will pass through The peripheral driving circuit forms a potential difference between the gate and the source of the power MOSFET. This potential difference reaches a certain level, which will cause the device to be turned on by mistake, so that the upper and lower tubes will be short-circuited, and the device will eventually burn out.

Method used

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  • A power mosfet with miller clamp function
  • A power mosfet with miller clamp function
  • A power mosfet with miller clamp function

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Embodiment Construction

[0034] The principles and features of the present invention are described below in conjunction with the accompanying drawings, and the examples given are only used to explain the present invention, and are not intended to limit the scope of the present invention.

[0035] like Figure 2-Figure 3 As shown, a power MOSFET with Miller clamping function provided by the first embodiment of the present invention includes a BJT for Miller clamping, and MOSFET cells 1 arranged on both sides of the BJT;

[0036] The BJT includes a drain metal 3, an N+ type substrate 4 and an N-type epitaxial layer 5 stacked sequentially from bottom to top;

[0037] The top layer of the N-type epitaxial layer 5 has a first P-type well region 6, and the top layer of the first P-type well region 6 has an N-type well region 7 and a first P+ ohmic contact region 10 arranged at intervals, The N-type well region 7 is located on both sides of the first P+ ohmic contact region 10; the N-type well region 7 has ...

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Abstract

The invention relates to a power MOSFET with a Miller clamp function, belonging to the technical field of power semiconductor devices. A power MOSFET (insulated gate field effect transistor) with a Miller clamp function of the present invention can discharge the charging and discharging current on the Miller capacitor to the source through a monolithically integrated BJT (bipolar transistor) and Only a small amount of gate-source voltage drop is generated, which effectively reduces the risk of false turn-on of the power MOSFET caused by charging and discharging the Miller capacitor, and greatly improves the short-circuit robustness of the device.

Description

technical field [0001] The invention belongs to the technical field of power semiconductor devices, and in particular relates to a power MOSFET with a Miller clamp function. Background technique [0002] Power MOSFETs are widely used in the field of power electronics. Compared with bipolar devices (such as IGBTs), power MOSFETs have lower switching losses, which makes them more competitive in high-frequency application scenarios. [0003] However, the higher switching speed brings about the increase of dv / dt, especially in the bridge circuit, the rapid change of the Switch node voltage will cause the Miller capacitor in the power MOSFET to charge and discharge rapidly, and the charge and discharge current will pass through The peripheral drive circuit forms a potential difference between the gate and source of the power MOSFET. This potential difference reaches a certain level, which will cause the device to be turned on by mistake, so that the upper and lower tubes are sho...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/07
CPCH01L27/0705
Inventor 顾航高巍戴茂州
Owner NOVUS SEMICON CO LTD
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