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A deep ultraviolet algan-based light-emitting diode with coupled quantum well structure

A technology for coupling quantum wells and light-emitting diodes, applied in semiconductor devices, electrical components, circuits, etc., can solve problems such as low luminous efficiency, achieve the effects of suppressing efficiency decline, reducing Auger recombination rate, and improving internal quantum efficiency

Active Publication Date: 2021-12-21
JIANGSU INST OF ADVANCED SEMICON CO LTD
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  • Abstract
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  • Application Information

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Problems solved by technology

[0003] In view of the low luminous efficiency of deep ultraviolet nitride LEDs at present, we propose a coupled quantum well structure design, which can enhance the TE / TM mode spontaneous emission recombination rate of c-plane LEDs, improve the internal quantum efficiency of LED devices, and Suppressing the efficiency droop effect of nitride LED devices

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  • A deep ultraviolet algan-based light-emitting diode with coupled quantum well structure
  • A deep ultraviolet algan-based light-emitting diode with coupled quantum well structure
  • A deep ultraviolet algan-based light-emitting diode with coupled quantum well structure

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Embodiment 1

[0017] This example discloses a coupling quantum well structure deep UV AlgaN-based air emitting diode, replacing the conventional well layer by the coupling well layer, adjusts the energy belt structure of the quantum well, expands the radiation composite region of the electron-hole in the well layer, thereby reducing The Russian compound rate increases the total spontaneous radiation composite rate, improves the internal quantum efficiency of the LED device, and suppresses the efficiency of the device.

[0018] The embodiment of the present invention has an ultraviolet nitride light emitting diode of a coupling quantum well structure, such as figure 1 As shown, the substrate 10, the buffer layer 20, the superlattice layer 30, the N-type semiconductor layer 40, the multi-quantum well structure 50, the P-type semiconductor layer 60, and the p-type ohmic contact layer 70 are sequentially included. Among them, the multi-quantum well structure 50 is composed of a barrier layer 51 and...

Embodiment 2

[0029] This example discloses a coupling quantum well structure dark UV AlgaN-based air optical diode, the difference from Example 1 is that the well layer 52 consists of a 5-layer structure, from the bottom to the top to Al1 x GA 1-x N well layer 521, Al y GA 1-y N isolation layer 522, Al x GA 1-x N well layer 523 constitutes, Al y GA 1-y N isolation layer 524, Al x GA 1-x The N well layer 525 is composed, such as Figure 5 Indicated.

[0030] Image 6 The inner quantum efficiency of the coupling quantum well structure (sample XA) and the conventional quantum well structure (sample B and sample C) is provided for the potential well layer. The N-type semiconductor layer of sample XA is n-type Al 0.55 GA 0.45 N material; barrier is 8 nanometer thick Al 0.5 GA 0.5 N; Coupling well layer is 1 nanomerate Al 0.35 GA 0.65 N, 2 nanometer thick Al 0.5 GA 0.5 N, 1 nanometer thick al1 0.35 GA 0.65 N, 2 nanometer thick Al 0.5 GA 0.5 N, 1 nanometer thick al1 0.35 GA 0.65 N. From the figure, we...

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Abstract

The invention discloses a deep-ultraviolet AlGaN-based light-emitting diode with a coupled quantum well structure, which at least includes: an n-type semiconductor layer, a multi-quantum well structure formed by periodically overlapping a potential barrier layer and a coupled AlGaN well layer, and a p-type semiconductor layer. It is characterized in that: the coupling AlGaN well layer includes at least a three-layer structure, which is Al from bottom to top x Ga 1‑x N well layer, Al y Ga 1‑y N barrier layer, and Al x Ga 1‑x N well layer. By using the coupled well layer structure design, the TE / TM mode spontaneous emission recombination rate of the c-plane LED is enhanced, the internal quantum efficiency of the LED device is improved, and the efficiency drop effect of the nitride LED device is suppressed, thereby improving the optics of the deep ultraviolet nitride light-emitting diode performance.

Description

Technical field [0001] The present invention relates to the field of deep UV nitride LEDs, in particular to improve the AlgaN mill quantum well structural deep ultraviolet LEDs of luminous efficiency. Background technique [0002] AlgaN-based deep UV (DUV) LED (LED) has broad application prospects in water purification, bactericidal, skin treatment, and has received wide concern. So far, in the 250-280 nm wavelength range, the outer quantum efficiency of the AlGAN-based DUV-LED die having a P-GaN contact layer is generally less than 7%. Compared to the highly efficient nitride blue LED, since the AlGAN-based DUV-LED has high absorption and unique polarization characteristics of the main electrowenevile, the P-GaN contact layer, the external quantum efficiency is low. In order to solve these problems, researchers have proposed a variety of ways to improve the luminescence efficiency of AlGAN-based DUV-LEDs. For example, the P-GaN contact layer is replaced with the AlGaN: MG contac...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/06H01L33/32
CPCH01L33/06H01L33/32
Inventor 李毅朱友华王美玉胡涛葛梅
Owner JIANGSU INST OF ADVANCED SEMICON CO LTD
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