Phase change memory and manufacturing method thereof

Abstract

An embodiment of the invention discloses a phase change memory and a manufacturing method thereof. The phase change memory comprises a first conductive wire, a phase change memory unit and a second conductive wire which are sequentially stacked from bottom to top, wherein the first conductive wire and the second conductive wire are parallel to the same plane and are perpendicular to each other, and the phase change memory unit is perpendicular to the first conductive wire and the second conductive wire; the phase change memory unit comprises a first induction layer and a phase change storage layer which are arranged in a stacked mode; and the first induction layer is located between the phase change memory layer and the first conductive wire and is used for inducing the phase change memory layer to be converted from an amorphous phase to a crystalline phase.

Description

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AI Technical Summary

Benefits of technology

This invention relates to an improved method for controlling how fast it changes from one state (crystal) into another without consuming too much energy or causing damage during writing data on a device with this technology.

Problems solved by technology

The technical problem addressed in this patented method relates to improving the performance of phase changes memories during their use on electronic systems such as smartphones or tablets with limited battery capacity.

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