Temperature control device and method in semiconductor process device

Abstract

The invention provides a temperature control device and method in a semiconductor process device, and the temperature control device comprises a first temperature control source, a second temperature control source, a first output pipeline, a second output pipeline, a first backflow pipeline, a second backflow pipeline, a first short-circuit pipeline, a second short-circuit pipeline, and a controller. The output ports of the two temperature control sources are respectively communicated with the inlet of a chuck through the two output pipelines, and the backflow ports of the two temperature control sources are respectively communicated with the outlet of the chuck through two backflow pipelines; the output ports of the two temperature control sources are respectively communicated with the respective backflow ports through the two short-circuit pipelines; an on-off switch is arranged on each pipeline; the controller is used for sequentially connecting or disconnecting the multiple on-off switches and switching the connection of the chuck and the two temperature control sources, and the temperatures of the temperature control media in the two temperature control sources are different. According to the present invention, the temperature control range can be widened, the temperature control time can be shortened, and the problem of fluid mixing in the two temperature control sources can be effectively solved.

Description

technical field [0001] The present invention relates to the technical field of semiconductors, in particular to a temperature control device and method in semiconductor process equipment. Background technique [0002] The ESC (Electrostatic Adsorption Chuck) in the etching machine is mainly used for the adsorption and fixation of the wafer (wafer) and the precise temperature required for the process. Therefore, the inside of the ESC is usually provided with a channel, and the cooling / heating liquid or gas is passed into the channel through the temperature control device to precisely adjust the temperature of the ESC and make the temperature more uniform. [0003] However, with the continuous development of the semiconductor industry and the etching process, during the etching process of the wafer, different process steps need to use different temperatures, and the temperature difference is large. The existing single-channel ESC temperature adjustment method is difficult to g...

AI Technical Summary

Problems solved by technology

[0003] However, with the continuous development of the semiconductor industry and the etching process, during the etching process of the wafer, different process steps need to use different temperatures, and the temperature difference is large. The existing single-channel ESC temperature adjustment method is difficult to guarantee the temperature. Uniformity and timeliness of switching

However, the existing dual-channel ESC temperature adjustment method is prone to the problem of liquid leakage

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