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System and method for measuring parasitic inductance parameter of capacitor

A parasitic inductance and capacitor technology, applied in the field of parasitic parameter measurement, can solve the problems of low precision and slow measurement speed, and achieve the effect of easy implementation and simple hardware solution

Pending Publication Date: 2021-06-25
SHANGHAI MARITIME UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The purpose of the present invention is to provide a system and method for measuring the parasitic inductance parameters of capacitors to solve the problems of slow measurement speed and low precision in the prior art, which can quickly measure the parasitic inductance parameters of capacitors

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  • System and method for measuring parasitic inductance parameter of capacitor
  • System and method for measuring parasitic inductance parameter of capacitor
  • System and method for measuring parasitic inductance parameter of capacitor

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Embodiment Construction

[0042] The following is attached Figure 1-6 and Specific Embodiments A system and method for measuring parasitic inductance parameters of capacitors proposed by the present invention will be further described in detail.

[0043] Such as figure 1 As shown, a system for measuring the parasitic inductance parameters of capacitors provided by the present invention includes:

[0044] capacitor 100;

[0045] A standard inductance 200, which is a straight wire in this embodiment, is connected in series with the capacitor 100 to form a series circuit;

[0046] Capacitance charge and discharge measurement module 300 is connected to the series circuit composed of capacitor 100 and standard inductance 200, and is used to charge and discharge capacitor 100;

[0047] The data acquisition and processing module 400 is connected with the capacitance charge and discharge measurement module 300, and is used to send a control signal and control the capacitance charge and discharge measuremen...

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Abstract

The invention relates to a system and a method for measuring a parasitic inductance parameter of a capacitor. The system comprises the capacitor, a standard inductor which is connected in series with the capacitor to form a series circuit, a capacitor charging and discharging measurement module which is connected with a series circuit of the capacitor and the standard inductor and is used for charging and discharging the capacitor, and a data acquisition and processing module which is connected with the capacitor charging and discharging measurement module and is used for sending a control signal to enable the capacitor charging and discharging measurement module to switch on and switch off the charging and discharging of the capacitor and acquiring the voltages at the two ends of the capacitor and the standard inductor before and after the discharging of the capacitor. The inductance value of the parasitic inductance of the capacitor is calculated according to the collected voltages. According to the invention, the problems of long time consumption, low precision and the like of a traditional measurement method are solved, and the parasitic inductance parameter of the capacitor can be quickly measured.

Description

technical field [0001] The invention relates to the field of parasitic parameter measurement, in particular to a system and method for measuring parasitic inductance parameters of capacitors. Background technique [0002] In actual circuits, there are various distribution parameters of capacitor components, among which the parasitic inductance has the greatest influence on the characteristics of the capacitor itself. The inductance characteristics of these parasitic inductances make the capacitors have certain limitations in use. In switching circuits, the parasitic inductance of the commutation loop plays a very important role. According to the inductance of the parasitic inductance and the current change rate di / dt, the device is subjected to additional voltage stress in the switching state, and extreme conditions may cause damage to the device. The parasitic inductance of the DC bus capacitor in the commutation circuit is one of the influencing factors. Therefore, the pa...

Claims

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Application Information

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IPC IPC(8): G01R27/26
CPCG01R27/26
Inventor 韩金刚余蔚姚刚陈昊汤天浩
Owner SHANGHAI MARITIME UNIVERSITY