System and method for measuring parasitic inductance parameters of thin-film capacitor

Abstract

The invention discloses a system and method for measuring parasitic inductance parameters of a thin-film capacitor. The system comprises a module to be measured, a capacitor charging and discharging main circuit module, a drive circuit module, and a data collection and processing module, the module to be measured comprises a thin-film capacitor to be measured and an extra thin-film small capacitor, the to-be-measured thin-film capacitor and the extra thin-film small capacitor are connected in series, the capacitor charging and discharging main circuit comprises one or more switching tubes, and the drive circuit module can control the to-be-measured module to be charged or discharged through the capacitor charging and discharging main circuit, and the data collection and processing module can collect and process current data. The system and the method for measuring the parasitic inductance parameters of the thin-film capacitor can realize rapid measurement of the parasitic inductance parameters of the thin-film capacitor.

Description

technical field [0001] The invention relates to the field of parasitic parameter measurement, in particular to a measurement system for parasitic inductance parameters of film capacitors. Background technique [0002] In actual circuits, there are various distribution parameters of capacitor components, among which the parasitic inductance has the greatest influence on the characteristics of the capacitor itself. The inductance characteristics of these parasitic inductances make the capacitors have certain limitations in use. In switching circuits, the parasitic inductance of the commutation loop plays a very important role. According to the inductance of the parasitic inductance and the current change rate di / dt, the device is subjected to additional voltage stress in the switching state, and extreme conditions may cause damage to the device. The parasitic inductance of the DC bus capacitor in the commutation circuit is one of the influencing factors. Therefore, the parasi...

AI Technical Summary

Problems solved by technology

Since the inductance of the capacitor's parasitic inductance is very small, generally at the nH level, most LCR bridges cannot measure the parasitic inductance of the capacitor itself.

The measurement method of the parasitic inductance parameter of the capacitor is mainly to use the principle of self-resonance of the capacitor to measure, but since the capacitance value of the capacitor and the inductance value of the parasitic inductance to be measured are not determined, the measuring equipment needs to provide a large voltage frequency range, and The measurement process needs to detect and collect the frequency corresponding to the self-resonance of the capacitive element, which is not conducive to fast and accurate measurement

Images